scholarly journals Spectroscopic Studies of Band Edge Electronic States in Elemental High-k Oxide Dielectrics on Si and Ge Substrates

2007 ◽  
Author(s):  
G. Lucovsky ◽  
H. Seo ◽  
L. B. Fleming ◽  
M. D. Ulrich ◽  
J. Lüning ◽  
...  
Keyword(s):  
Electronic States ◽  
Spectroscopic Studies ◽  
Band Edge ◽  
High K

Spectroscopic Studies of Band Edge Electronic and Defect States in Elemental High-k Oxide Dielectrics and Si Oxynitride Alloys onto Si(100) Substrates

2019 ◽  
Vol 8 (1) ◽  
pp. 105-110
Author(s):  
Gerald Lucovsky ◽  
Hyungtak Seo ◽  
Les Fleming ◽  
Marc Ulrich ◽  
Jan Lüning
Keyword(s):  
Spectroscopic Studies ◽  
Band Edge ◽  
Defect States ◽  
High K

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

Additive Process Induced Strain (APIS) Technology for Lg = 30nm Band-Edge High-k/Metal Gate nMOSFET

2008 ◽  
Author(s):  
M. M. Hussain ◽  
K. Rader ◽  
C. Smith ◽  
C. Young ◽  
S. Suthram ◽  
...  
Keyword(s):  
Band Edge ◽  
Metal Gate ◽  
Additive Process ◽  
High K

Surface passivant effects on electronic states of the band edge in Si-nanocrystals

2003 ◽  
Vol 126 (3) ◽  
pp. 103-106 ◽  
Author(s):  
Ying Dai ◽  
Shenghao Han ◽  
Dadi Dai ◽  
Ying Zhang ◽  
Yun Qi
Keyword(s):  
Electronic States ◽  
Band Edge ◽  
Si Nanocrystals

scholarly journals Soft X-ray spectroscopic studies of the electronic structure of M:BiVO4(M = Mo, W) single crystals

2015 ◽  
Vol 3 (47) ◽  
pp. 23743-23753 ◽  
Author(s):  
V. Jovic ◽  
J. Laverock ◽  
A. J. E. Rettie ◽  
J.-S. Zhou ◽  
C. B. Mullins ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Single Crystals ◽  
Electronic States ◽  
Spectroscopic Studies ◽  
X Ray

X-ray spectroscopy reveals the presence of inter-band gap electronic states of egsymmetry in M:BiVO4(M = Mo, W) PEC anodes.

First-principles calculations of band-edge electronic states of silicon quantum wires

1994 ◽  
Vol 50 (19) ◽  
pp. 14223-14227 ◽  
Author(s):  
R. J. Needs ◽  
S. Bhattacharjee ◽  
K. J. Nash ◽  
A. Qteish ◽  
A. J. Read ◽  
...  
Keyword(s):  
First Principles ◽  
Quantum Wires ◽  
Electronic States ◽  
Band Edge ◽  
First Principles Calculations ◽  
Silicon Quantum Wires
Sign in / Sign up

Export Citation Format

Share Document