Comparison of Metal Oxide Semiconductor Capacitance‐Time and Surface Photovoltage Methods in Investigating Annealing Behavior of Iron Contamination in Boron‐doped Silicon

1993 ◽  
Vol 140 (7) ◽  
pp. 2042-2046
Author(s):  
X. Gao ◽  
S. Yee
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Surface Photovoltage ◽  
Annealing Behavior ◽  
Boron Doped ◽  
Iron Contamination ◽  
Doped Silicon

Metal‐oxide‐semiconductor structures on germanium/boron doped silicon

1990 ◽  
Vol 68 (9) ◽  
pp. 4647-4651 ◽  
Author(s):  
O. Hashemipour ◽  
S. S. Ang ◽  
W. D. Brown ◽  
J. R. Yeargan
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Boron Doped ◽  
Doped Silicon

Inversion in Metal–Oxide–Semiconductor Capacitors on Boron-Doped Diamond

2015 ◽  
Vol 36 (6) ◽  
pp. 603-605 ◽  
Author(s):  
Kiran Kumar Kovi ◽  
Orjan Vallin ◽  
Saman Majdi ◽  
Jan Isberg
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Doped Diamond ◽  
Boron Doped

Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated byIn situArsenic- and Boron-Doped Epitaxy

2010 ◽  
Vol 49 (7) ◽  
pp. 071301
Author(s):  
Yoshiaki Kikuchi ◽  
Yasushi Tateshita ◽  
Yuki Miyanami ◽  
Hitoshi Wakabayashi ◽  
Yukio Tagawa ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Doped
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