The effects of a hydrogen ambient on the interface state energy distribution of gamma irradiated and charge injected metal‐oxide‐semiconductor structures fabricated on germanium/boron doped silicon

O. Hashemipour; S. S. Ang; W. D. Brown; J. R. Yeargan; L. West

doi:10.1063/1.349815

The effects of a hydrogen ambient on the interface state energy distribution of gamma irradiated and charge injected metal‐oxide‐semiconductor structures fabricated on germanium/boron doped silicon

Journal of Applied Physics ◽

10.1063/1.349815 ◽

1991 ◽

Vol 70 (11) ◽

pp. 6902-6907 ◽

Cited By ~ 4

Author(s):

O. Hashemipour ◽

S. S. Ang ◽

W. D. Brown ◽

J. R. Yeargan ◽

L. West

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

State Energy ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Boron Doped ◽

Doped Silicon ◽

Gamma Irradiated

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Metal‐oxide‐semiconductor structures on germanium/boron doped silicon

Journal of Applied Physics ◽

10.1063/1.346174 ◽

1990 ◽

Vol 68 (9) ◽

pp. 4647-4651 ◽

Cited By ~ 5

Author(s):

O. Hashemipour ◽

S. S. Ang ◽

W. D. Brown ◽

J. R. Yeargan

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Boron Doped ◽

Doped Silicon

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Dopant deactivation and annealing characteristics of metal‐oxide‐semiconductor structures on germanium/boron‐doped silicon after gamma irradiation or Fowler–Nordheim charge injection

Journal of Applied Physics ◽

10.1063/1.349567 ◽

1991 ◽

Vol 70 (3) ◽

pp. 1517-1521 ◽

Cited By ~ 4

Author(s):

O. Hashemipour ◽

S. S. Ang ◽

W. D. Brown ◽

J. R. Yeargan ◽

L. West

Keyword(s):

Metal Oxide ◽

Gamma Irradiation ◽

Charge Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Boron Doped ◽

Doped Silicon ◽

Dopant Deactivation

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Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

Journal of Applied Physics ◽

10.1063/1.3673572 ◽

2012 ◽

Vol 111 (1) ◽

pp. 014502 ◽

Cited By ~ 75

Author(s):

Hironori Yoshioka ◽

Takashi Nakamura ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Accurate Evaluation ◽

Semiconductor Structures

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Comparison of Metal Oxide Semiconductor Capacitance‐Time and Surface Photovoltage Methods in Investigating Annealing Behavior of Iron Contamination in Boron‐doped Silicon

Journal of The Electrochemical Society ◽

10.1149/1.2220760 ◽

1993 ◽

Vol 140 (7) ◽

pp. 2042-2046

Author(s):

X. Gao ◽

S. Yee

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Photovoltage ◽

Annealing Behavior ◽

Boron Doped ◽

Iron Contamination ◽

Doped Silicon

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Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures

Applied Physics Letters ◽

10.1063/1.1481194 ◽

2002 ◽

Vol 80 (21) ◽

pp. 3952-3954 ◽

Cited By ~ 9

Author(s):

Quazi Deen Mohd Khosru ◽

Anri Nakajima ◽

Takashi Yoshimoto ◽

Shin Yokoyama

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Semiconductor Structures

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Response to “Comment on ‘Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures’ ” [Appl. Phys. Lett. 81, 3681 (2002)]

Applied Physics Letters ◽

10.1063/1.1519331 ◽

2002 ◽

Vol 81 (19) ◽

pp. 3683-3684 ◽

Cited By ~ 2

Author(s):

Quazi Deen Mohd Khosru ◽

Anri Nakajima ◽

Takashi Yoshimoto ◽

Shin Yokoyama

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Semiconductor Structures

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Interface state density of SiO2/p-type 4H-SiC ( 0001), ( 112¯0), ( 11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

Applied Physics Letters ◽

10.1063/1.4946863 ◽

2016 ◽

Vol 108 (15) ◽

pp. 152108 ◽

Cited By ~ 19

Author(s):

Takuma Kobayashi ◽

Seiya Nakazawa ◽

Takafumi Okuda ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

P Type

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Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing

Applied Physics Letters ◽

10.1063/1.126103 ◽

2000 ◽

Vol 76 (12) ◽

pp. 1585-1587 ◽

Cited By ~ 123

Author(s):

K. Fukuda ◽

S. Suzuki ◽

T. Tanaka ◽

K. Arai

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Hydrogen Annealing ◽

Semiconductor Structures

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Response to “Comment on ‘Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing’ ” [Appl. Phys. Lett. 78, 4043 (2001)]

Applied Physics Letters ◽

10.1063/1.1379979 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4045-4045 ◽

Cited By ~ 1

Author(s):

K. Fukuda ◽

K. Arai ◽

S. Suzuki ◽

T. Tanaka

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Hydrogen Annealing ◽

Semiconductor Structures

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Interface state generation associated with hole transport in metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.337618 ◽

1986 ◽

Vol 60 (1) ◽

pp. 448-449 ◽

Cited By ~ 15

Author(s):

H. E. Boesch ◽

F. B. McLean

Keyword(s):

Metal Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Hole Transport ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

State Generation

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