The effect of surface potential fluctuations on surface photovoltage in metal‐oxide‐semiconductor structures

S. K. Krawczyk; A. Jakubowski

doi:10.1063/1.329406

The effect of surface potential fluctuations on surface photovoltage in metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.329406 ◽

1981 ◽

Vol 52 (8) ◽

pp. 5399-5400 ◽

Cited By ~ 1

Author(s):

S. K. Krawczyk ◽

A. Jakubowski

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Photovoltage ◽

Potential Fluctuations ◽

Semiconductor Structures ◽

Effect Of Surface

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Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

Journal of Applied Physics ◽

10.1063/1.3673572 ◽

2012 ◽

Vol 111 (1) ◽

pp. 014502 ◽

Cited By ~ 75

Author(s):

Hironori Yoshioka ◽

Takashi Nakamura ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Accurate Evaluation ◽

Semiconductor Structures

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Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures

Physical Review B ◽

10.1103/physrevb.88.045322 ◽

2013 ◽

Vol 88 (4) ◽

Cited By ~ 9

Author(s):

Lee A. Walsh ◽

Greg Hughes ◽

Jun Lin ◽

Paul K. Hurley ◽

Terrance P. O’Regan ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Photoelectron Spectroscopy ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Semiconductor Structures ◽

Characterization Study

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Effect of surface electric field on the gate capacitance of metal‐oxide‐semiconductor structures of ternary semiconductors

Journal of Applied Physics ◽

10.1063/1.342507 ◽

1988 ◽

Vol 64 (2) ◽

pp. 918-921 ◽

Cited By ~ 1

Author(s):

K. P. Ghatak ◽

M. Mondal

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Capacitance ◽

Semiconductor Structures ◽

Surface Electric Field ◽

Ternary Semiconductors ◽

Effect Of Surface

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Surface potential fluctuations in metal–oxide–semiconductor capacitors fabricated on different silicon carbide polytypes

Applied Physics Letters ◽

10.1063/1.112547 ◽

1994 ◽

Vol 65 (21) ◽

pp. 2723-2724 ◽

Cited By ~ 48

Author(s):

E. Bano ◽

T. Ouisse ◽

L. Di Cioccio ◽

S. Karmann

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Surface Potential ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Potential Fluctuations

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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters ◽

10.1063/1.4907861 ◽

2015 ◽

Vol 106 (5) ◽

pp. 051605 ◽

Cited By ~ 52

Author(s):

Shenghou Liu ◽

Shu Yang ◽

Zhikai Tang ◽

Qimeng Jiang ◽

Cheng Liu ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

Physical Review B ◽

10.1103/physrevb.64.125306 ◽

2001 ◽

Vol 64 (12) ◽

Cited By ~ 37

Author(s):

Alexander A. Demkov ◽

Xiaodong Zhang ◽

D. A. Drabold

Keyword(s):

Metal Oxide ◽

First Principles ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage Characteristic ◽

Semiconductor Structures ◽

Current Voltage

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Cited By ~ 4

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.2963705 ◽

2008 ◽

Vol 104 (3) ◽

pp. 034313 ◽

Cited By ~ 6

Author(s):

Gargi Chakraborty ◽

C. K. Sarkar

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Tunneling Currents

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