Dopant deactivation and annealing characteristics of metal‐oxide‐semiconductor structures on germanium/boron‐doped silicon after gamma irradiation or Fowler–Nordheim charge injection

1991 ◽  
Vol 70 (3) ◽  
pp. 1517-1521 ◽  
Author(s):  
O. Hashemipour ◽  
S. S. Ang ◽  
W. D. Brown ◽  
J. R. Yeargan ◽  
L. West
Keyword(s):  
Metal Oxide ◽  
Gamma Irradiation ◽  
Charge Injection ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Boron Doped ◽  
Doped Silicon ◽  
Dopant Deactivation

Metal‐oxide‐semiconductor structures on germanium/boron doped silicon

1990 ◽  
Vol 68 (9) ◽  
pp. 4647-4651 ◽  
Author(s):  
O. Hashemipour ◽  
S. S. Ang ◽  
W. D. Brown ◽  
J. R. Yeargan
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Boron Doped ◽  
Doped Silicon

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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