Metal‐oxide‐semiconductor structures on germanium/boron doped silicon

O. Hashemipour; S. S. Ang; W. D. Brown; J. R. Yeargan

doi:10.1063/1.346174

Metal‐oxide‐semiconductor structures on germanium/boron doped silicon

Journal of Applied Physics ◽

10.1063/1.346174 ◽

1990 ◽

Vol 68 (9) ◽

pp. 4647-4651 ◽

Cited By ~ 5

Author(s):

O. Hashemipour ◽

S. S. Ang ◽

W. D. Brown ◽

J. R. Yeargan

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Boron Doped ◽

Doped Silicon

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The effects of a hydrogen ambient on the interface state energy distribution of gamma irradiated and charge injected metal‐oxide‐semiconductor structures fabricated on germanium/boron doped silicon

Journal of Applied Physics ◽

10.1063/1.349815 ◽

1991 ◽

Vol 70 (11) ◽

pp. 6902-6907 ◽

Cited By ~ 4

Author(s):

O. Hashemipour ◽

S. S. Ang ◽

W. D. Brown ◽

J. R. Yeargan ◽

L. West

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

State Energy ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Boron Doped ◽

Doped Silicon ◽

Gamma Irradiated

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Dopant deactivation and annealing characteristics of metal‐oxide‐semiconductor structures on germanium/boron‐doped silicon after gamma irradiation or Fowler–Nordheim charge injection

Journal of Applied Physics ◽

10.1063/1.349567 ◽

1991 ◽

Vol 70 (3) ◽

pp. 1517-1521 ◽

Cited By ~ 4

Author(s):

O. Hashemipour ◽

S. S. Ang ◽

W. D. Brown ◽

J. R. Yeargan ◽

L. West

Keyword(s):

Metal Oxide ◽

Gamma Irradiation ◽

Charge Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Boron Doped ◽

Doped Silicon ◽

Dopant Deactivation

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Comparison of Metal Oxide Semiconductor Capacitance‐Time and Surface Photovoltage Methods in Investigating Annealing Behavior of Iron Contamination in Boron‐doped Silicon

Journal of The Electrochemical Society ◽

10.1149/1.2220760 ◽

1993 ◽

Vol 140 (7) ◽

pp. 2042-2046

Author(s):

X. Gao ◽

S. Yee

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Photovoltage ◽

Annealing Behavior ◽

Boron Doped ◽

Iron Contamination ◽

Doped Silicon

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Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

Journal of Applied Physics ◽

10.1063/1.4933288 ◽

2015 ◽

Vol 118 (15) ◽

pp. 154305 ◽

Cited By ~ 9

Author(s):

Tian Zhang ◽

Binesh Puthen-Veettil ◽

Lingfeng Wu ◽

Xuguang Jia ◽

Ziyun Lin ◽

...

Keyword(s):

Metal Oxide ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Measurement ◽

Boron Doped ◽

Capacitance Voltage ◽

Doped Silicon ◽

Metal Oxide Semiconductor Structure

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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters ◽

10.1063/1.4907861 ◽

2015 ◽

Vol 106 (5) ◽

pp. 051605 ◽

Cited By ~ 52

Author(s):

Shenghou Liu ◽

Shu Yang ◽

Zhikai Tang ◽

Qimeng Jiang ◽

Cheng Liu ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

Physical Review B ◽

10.1103/physrevb.64.125306 ◽

2001 ◽

Vol 64 (12) ◽

Cited By ~ 37

Author(s):

Alexander A. Demkov ◽

Xiaodong Zhang ◽

D. A. Drabold

Keyword(s):

Metal Oxide ◽

First Principles ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage Characteristic ◽

Semiconductor Structures ◽

Current Voltage

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Cited By ~ 4

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.2963705 ◽

2008 ◽

Vol 104 (3) ◽

pp. 034313 ◽

Cited By ~ 6

Author(s):

Gargi Chakraborty ◽

C. K. Sarkar

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Tunneling Currents

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