Point Defect Generation during Phosphorus Diffusion in Silicon: II . Concentrations below Solid Solubility, Ion‐Implanted Phosphorus

1987 ◽  
Vol 134 (9) ◽  
pp. 2348-2356 ◽  
Author(s):  
J. C. C. Tsai ◽  
D. G. Schimmel ◽  
R. E. Ahrens ◽  
R. B. Fair
Keyword(s):  
Point Defect ◽  
Solid Solubility ◽  
Phosphorus Diffusion ◽  
Defect Generation ◽  
Ion Implanted

Point Defect Generation during Phosphorus Diffusion in Silicon: I . Concentrations above Solid Solubility

1987 ◽  
Vol 134 (6) ◽  
pp. 1508-1518 ◽  
Author(s):  
J. C. C. Tsai ◽  
D. G. Schimmel ◽  
R. B. Fair ◽  
W. Maszara
Keyword(s):  
Point Defect ◽  
Solid Solubility ◽  
Phosphorus Diffusion ◽  
Defect Generation

In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
C. R. Cho ◽  
N. Yarykin ◽  
G. A. Rozgonyi ◽  
R. A. Zuhr
Keyword(s):  
Complex Formation ◽  
Ion Implantation ◽  
Point Defect ◽  
Charge State ◽  
Defect Generation ◽  
Defect Clusters ◽  
Type Silicon ◽  
P Type ◽  
Ion Implanted

ABSTRACTThe formation of vacancy-related defects in n-type silicon has been studied immediately after implantation of He, Si, or Ge ions at 85 K using in-situ DLTS. A-center concentrations in He-implanted samples reach a maximum immediately after implantation, whereas, with Si or Ge ion implanted samples they continuously increase during subsequent anneals. It is proposed that defect clusters, which emit vacancies during anneals, are generated in the collision cascades of Si or Ge ions. An illumination-induced suppression of A-center formation is seen immediately after implantation of He ions at 85 K. This effect is also observed with Si or Ge ions, but only after annealing. The suppression of vacancy complex formation via photoexcitation is believed to occur due to an enhanced recombination of defects during ion implantation, and results in reduced number of vacancies remaining in the defect clusters. In p-type silicon, a reduction in K-center formation and an enhanced migration of defects are concurrently observed in the illuminated sample implanted with Si ions. These observations are consistent with a model where the injection of excess carriers modifies the defect charge state and impacts their diffusion.

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

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