scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

Impurity-Point Defect Interactions in Ion Implanted Metastable Systems

1987 ◽  
Vol 15-18 ◽  
pp. 757-764 ◽  
Author(s):  
O. Meyer ◽  
A. Azzam ◽  
M.K. Kloska ◽  
Andrzej Turos
Keyword(s):  
Point Defect ◽  
Defect Interactions ◽  
Metastable Systems ◽  
Ion Implanted

High Temperature Implantation of Single Crystal Beta Silicon Carbide Thin Films

1986 ◽  
Vol 77 ◽  
Author(s):  
J. A. Edmond ◽  
S. P. Withrow ◽  
W. Wadlin ◽  
R. F. Davis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ionic Species ◽  
Differential Capacitance ◽  
Electrical Activation ◽  
Ion Channeling ◽  
Structural And Electrical Properties ◽  
Lattice Damage ◽  
P Type

ABSTRACTIons of aluminum, gallium and nitrogen were implanted into (100) oriented β-SiC thin films at temperatures of 623K, 823K and 1023K. Rutherford backscattering/ion channeling analyses revealed that implantation of any one of the ionic species at 623K resulted in only slight crystal lattice damage. In comparison, implantation conducted using the same dosimetry and energy at room temperature resulted in extensive lattice damage; in the case of gallium, amorphization occurred. The backscattered yield from samples implanted at 1023K was nearly that of a virgin aligned spectra. This in situ annealing effect did not, however, result in the complete electrical activation of implanted species. In order to increase the percent of electrical activation, samples were annealed at 1473K for 1800s following implantation. Differential capacitance-voltage, spreading resistance and sheet resistance measurements were made in order to electrically characterize these layers. These measurements indicated the activation of p-type and n-type species in samples implanted with aluminum or gallium and nitrogen, respectively. The authors have previously reported p-type formation in β-SiC implanted with aluminum at room temperature following a 2073K - 300s anneal. By heating to 1023K during implantation and annealing at 1473K after implantation, improved structural and electrical properties have been achieved.

Ion Species Dependence of Electrical Characteristics in Ion Implanted GaAs

1992 ◽  
Vol 279 ◽  
Author(s):  
L. He ◽  
W. A. Anderson
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Surface Damage ◽  
Electrical Performance ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTFluorine, boron and oxygen implantation in GaAs has been investigated by electrical characterization using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Ion implantation at lOOkeV energy was conducted with doses of 1011 and 1012/cm2. Carrier compensation was observed in each implanted sample. The compensation effect strongly depended on ion implantation conditions and ion species. Severe surface damage was also induced which degrades electrical performance. Rapid thermal annealing (RTA) treatment showed the heavier ion implanted samples to be more thermally stable. Defect levels for each implanted species were compared and identified.

A review of solute-point defect interactions in vanadium and its alloys: first-principles modeling and simulation

Tungsten ◽  
2021 ◽  
Vol 3 (1) ◽  
pp. 38-57
Author(s):  
Peng-Bo Zhang ◽  
Ji-Jun Zhao ◽  
Ting-Ting Zou ◽  
Rui-Huan Li ◽  
Peng-Fei Zheng ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Point Defect ◽  
First Principles ◽  
Defect Interactions

Point defect interactions with crystal interfaces

1984 ◽  
Vol 144 (1) ◽  
pp. 96-109 ◽  
Author(s):  
A.G. Crocker ◽  
J.I. Akhter ◽  
H.L. Tatham
Keyword(s):  
Point Defect ◽  
Defect Interactions ◽  
Crystal Interfaces

Raman and ion channeling analysis of damage in ion‐implanted GaAs: Dependence on ion dose and dose rate

1992 ◽  
Vol 71 (6) ◽  
pp. 2591-2595 ◽  
Author(s):  
U. V. Desnica ◽  
J. Wagner ◽  
T. E. Haynes ◽  
O. W. Holland
Keyword(s):  
Dose Rate ◽  
Ion Channeling ◽  
Ion Implanted
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