Comparison of Transmission Electron Microscope Cross Sections of Amorphous Regions in Ion Implanted Silicon with Point‐Defect Density Calculations

1992 ◽  
Vol 139 (12) ◽  
pp. 3631-3638 ◽  
Author(s):  
H. Cerva ◽  
G. Hobler
Keyword(s):  
Electron Microscope ◽  
Point Defect ◽  
Transmission Electron Microscope ◽  
Cross Sections ◽  
Defect Density ◽  
Transmission Electron ◽  
Ion Implanted

A Hvem Study of the Electron Irradiated Defects in Nitrogen Doped FZ-Si Single Crystal

1989 ◽  
Vol 163 ◽  
Author(s):  
Gao Yuzun ◽  
T. Takeyama
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Electron Irradiation ◽  
Defect Density ◽  
Migration Energy ◽  
Nitrogen Doped ◽  
Temperature Range ◽  
Transmission Electron ◽  
Excellent Property ◽  
P Type

AbstractHigh voltage transmission electron microscope (JEM-1000) has been used to investigate the electron irradiated defects in in p-type FZ-Si and nitrogen doped p-type FZ-Si. It was found that when the irradiated conditions were the saie ,the irradiated defects were easier to be produced in the FZ-Si than in nitrogen doped FZ-Si in the temperature range 573-773 K. The defect density was higher in the foraer. The migration energy of the vacancies in the temperature range 573-773 K was 0.34 and 0.58 eV for FZ-Si and nitrogen doped FZ-Si respectively. It seems to indicate that there was some interaction between vacancies and nitrogen atoms in the nitrogen doped FZ-Si. The results proved that the nitrogen doped FZ-Si has excellent property against electron irradiation.

A Technique for Preparing Transmission Electron Microscope Specimens Using Cleavage

1987 ◽  
Vol 115 ◽  
Author(s):  
T. Boone ◽  
S. Nakahara
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Cross Sections ◽  
Specimen Preparation ◽  
Plan View ◽  
Transmission Electron ◽  
Thinning Operation ◽  
Thin Electron ◽  
Reflection Electron Microscopy ◽  
Transparent Region

ABSTRACTA technique for observing both plan view and cross sections of a specimen directly in a transmission electron microscope (TEM) without relying on a tedious thinning operation was developed. This technique involves cleaving a specimen perpendicular to the plane, so that the thin (electron transparent) section of the cleaved edge can be directly imaged by TEM. The only limitations of this technique are that a specimen must be readily criacked or cleaved and that, since the transparent region is often bounded by a 90° corner, the extent of electron transparent region is somewhat localized. Nevertheless, the technique has the advantages of the ease of specimen preparation, and the absence of contamination or damage introduced in other conventional thinning methods. The geometry of the cleaved specimen is also suitable for reflection electron microscopy.

scholarly journals Sub-Ångstrom Low-Voltage Performance of a Monochromated, Aberration-Corrected Transmission Electron Microscope

2010 ◽  
Vol 16 (4) ◽  
pp. 386-392 ◽  
Author(s):  
David C. Bell ◽  
Christopher J. Russo ◽  
Gerd Benner
Keyword(s):  
Electron Microscope ◽  
Electron Energy ◽  
Transmission Electron Microscope ◽  
Cross Sections ◽  
Materials Science ◽  
Low Voltage ◽  
Transmission Electron ◽  
Electron Microscopes ◽  
Voltage Performance ◽  
Aberration Corrected

AbstractLowering the electron energy in the transmission electron microscope allows for a significant improvement in contrast of light elements and reduces knock-on damage for most materials. If low-voltage electron microscopes are defined as those with accelerating voltages below 100 kV, the introduction of aberration correctors and monochromators to the electron microscope column enables Ångstrom-level resolution, which was previously reserved for higher voltage instruments. Decreasing electron energy has three important advantages: (1) knock-on damage is lower, which is critically important for sensitive materials such as graphene and carbon nanotubes; (2) cross sections for electron-energy-loss spectroscopy increase, improving signal-to-noise for chemical analysis; (3) elastic scattering cross sections increase, improving contrast in high-resolution, zero-loss images. The results presented indicate that decreasing the acceleration voltage from 200 kV to 80 kV in a monochromated, aberration-corrected microscope enhances the contrast while retaining sub-Ångstrom resolution. These improvements in low-voltage performance are expected to produce many new results and enable a wealth of new experiments in materials science.

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