In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
C. R. Cho ◽  
N. Yarykin ◽  
G. A. Rozgonyi ◽  
R. A. Zuhr
Keyword(s):  
Complex Formation ◽  
Ion Implantation ◽  
Point Defect ◽  
Charge State ◽  
Defect Generation ◽  
Defect Clusters ◽  
Type Silicon ◽  
P Type ◽  
Ion Implanted

ABSTRACTThe formation of vacancy-related defects in n-type silicon has been studied immediately after implantation of He, Si, or Ge ions at 85 K using in-situ DLTS. A-center concentrations in He-implanted samples reach a maximum immediately after implantation, whereas, with Si or Ge ion implanted samples they continuously increase during subsequent anneals. It is proposed that defect clusters, which emit vacancies during anneals, are generated in the collision cascades of Si or Ge ions. An illumination-induced suppression of A-center formation is seen immediately after implantation of He ions at 85 K. This effect is also observed with Si or Ge ions, but only after annealing. The suppression of vacancy complex formation via photoexcitation is believed to occur due to an enhanced recombination of defects during ion implantation, and results in reduced number of vacancies remaining in the defect clusters. In p-type silicon, a reduction in K-center formation and an enhanced migration of defects are concurrently observed in the illuminated sample implanted with Si ions. These observations are consistent with a model where the injection of excess carriers modifies the defect charge state and impacts their diffusion.

The Formation of Highly Conductive Shallow Junction Layers in (100) Siliconl By Gallium Ion Implantation

1986 ◽  
Vol 71 ◽  
Author(s):  
H.B. Harrison ◽  
Y.H. Li ◽  
G.A. Sai-Halasz ◽  
S. Iyer
Keyword(s):  
Ion Implantation ◽  
Comparative Study ◽  
Electrical Activation ◽  
Shallow Junction ◽  
Type Silicon ◽  
Thermally Processed ◽  
Long Time ◽  
P Type ◽  
Ion Implanted

AbstractThis paper presents the results obtained from a comparative study of ion implanted Gallium (Ga) into (100), n type Silicon. A comparison is made between long time (≥ 30 mins) furnace annealed and Rapid Thermally Processed (RTP), 100keV implants of 1 and 3×10l5/cm2 doses of Ga. The results show that for RTP an extremely high substitutional concentration of Gallium, in excess of 3×1020/cm3 can be obtained with approximately 100% electrical activation, resulting in highly conductive very shallow p type layers.

X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon

1998 ◽  
Vol 524 ◽  
Author(s):  
C. H. Chang ◽  
U. Beck ◽  
T. H. Metzger ◽  
J. R. Patel
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Point Defects ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
X Rays ◽  
Scattered Intensity ◽  
X Ray ◽  
Defect Clusters ◽  
Point Defect Clusters

ABSTRACTTo characterize the point defects and point defect clusters introduced by ion implantation and annealing, we have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow us to characterize the nature of point defects or defect clusters introduced by ion implantation. We have also observed unexpected satellite peaks in the diffuse scattered tails. Possible causes for the occurrence of the peaks will be discussed.

Charge State of Copper-Silicide Precipitates in Silicon and its Application to the Understanding of Copper Precipitation Kinetics

1998 ◽  
Vol 510 ◽  
Author(s):  
A.A. Istratov ◽  
O.F. Vyvenko ◽  
C. Flink ◽  
T. Heiser ◽  
H. Hieslmair ◽  
...  
Keyword(s):  
Charge State ◽  
Copper Ions ◽  
Deep Level ◽  
Precipitation Kinetics ◽  
Precipitation Behavior ◽  
Copper Silicide ◽  
Copper Precipitation ◽  
Type Silicon ◽  
Rapid Quench ◽  
P Type

AbstractDeep level spectra obtained on n-type silicon samples after copper diffusion and rapid quench give evidence of a positive charge state of the precipitates in p-type silicon. Non-exponential precipitation behavior of interstitial Cu is demonstrated and explained. The possibility of Coulomb interaction between copper ions and copper precipitates is suggested and its influence on Cu precipitation kinetics is disCussed.

In situ 1/f noise studies on swift heavy ion irradiated p-type silicon

1999 ◽  
Vol 156 (1-4) ◽  
pp. 265-269 ◽  
Author(s):  
S.K Arora ◽  
Rajendra Singh ◽  
Ravi Kumar ◽  
D Kanjilal ◽  
G.K Mehta
Keyword(s):  
Heavy Ion ◽  
Type Silicon ◽  
Swift Heavy Ion ◽  
P Type

Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

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