Ultrathin gate oxide degradation under different rates of charge injection

Mapping Intimacies ◽

10.1117/12.361348 ◽

1999 ◽

Author(s):

Pitsini Mongkolkachit ◽

Bharat L. Bhuva ◽

Sharad Prasad ◽

N. Bui ◽

Sherra E. Kerns

Keyword(s):

Charge Injection ◽

Gate Oxide ◽

Oxide Degradation

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Practical manufacturing technique for reducing charge-induced gate oxide degradation during ion implantation

10.1117/12.361350 ◽

1999 ◽

Author(s):

Kenneth G. Moerschel ◽

W. A. Possanza ◽

James Sung ◽

M. A. Prozonic ◽

T. Long ◽

...

Keyword(s):

Ion Implantation ◽

Gate Oxide ◽

Manufacturing Technique ◽

Oxide Degradation

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Gate oxide degradation of SiC MOSFET under short-circuit aging tests

Microelectronics Reliability ◽

10.1016/j.microrel.2016.07.132 ◽

2016 ◽

Vol 64 ◽

pp. 415-418 ◽

Cited By ~ 13

Author(s):

S. Mbarek ◽

F. Fouquet ◽

P. Dherbecourt ◽

M. Masmoudi ◽

O. Latry

Keyword(s):

Short Circuit ◽

Gate Oxide ◽

Oxide Degradation ◽

Circuit Aging

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A new mechanism for gate oxide degradation and its applications

1998 IEEE International Integrated Reliability Workshop Final Report (Cat. No.98TH8363) ◽

10.1109/irws.1998.745370 ◽

2002 ◽

Author(s):

C.H. Liu ◽

K.Y. Fu ◽

T.A. DeMassa ◽

J.J. Sanchez

Keyword(s):

Gate Oxide ◽

Oxide Degradation

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Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time

IEEE Transactions on Power Electronics ◽

10.1109/tpel.2022.3142139 ◽

2022 ◽

pp. 1-1

Author(s):

Minghang Xie ◽

Pengju Sun ◽

Kaihong Wang ◽

Quanming Luo ◽

Xiong Du

Keyword(s):

Gate Oxide ◽

Oxide Degradation ◽

Degradation Monitoring ◽

Gate Charge

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Gate oxide thickness dependence of edge charge trapping in nmos transistors caused by charge injection under constant-current stress

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.813339 ◽

2003 ◽

Vol 50 (6) ◽

pp. 1548-1550 ◽

Cited By ~ 4

Author(s):

T.P. Chen ◽

Jiayi Huang ◽

M.S. Tse ◽

S.S. Tan ◽

C.H. Ang

Keyword(s):

Charge Injection ◽

Charge Trapping ◽

Gate Oxide ◽

Oxide Thickness ◽

Thickness Dependence ◽

Constant Current ◽

Current Stress ◽

Gate Oxide Thickness ◽

Nmos Transistors

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Temperature accelerated gate oxide degradation under plasma-induced charging

IEEE Electron Device Letters ◽

10.1109/55.496460 ◽

1996 ◽

Vol 17 (6) ◽

pp. 288-290 ◽

Cited By ~ 8

Author(s):

T. Brozek ◽

Y.D. Chan ◽

C.R. Viswanathan

Keyword(s):

Gate Oxide ◽

Oxide Degradation

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Effect of Electron Shading on Gate Oxide Degradation

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.2321 ◽

1998 ◽

Vol 37 (Part 1, No. 4B) ◽

pp. 2321-2324 ◽

Cited By ~ 10

Author(s):

Shigenori Sakamori ◽

Takahiro Maruyama ◽

Nobuo Fujiwara ◽

Hiroshi Miyatake

Keyword(s):

Gate Oxide ◽

Oxide Degradation

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Mechanisms and solutions to gate oxide degradation in flash memory by tunnel-oxide nitridation engineering

IEEE Electron Device Letters ◽

10.1109/led.2005.848122 ◽

2005 ◽

Vol 26 (6) ◽

pp. 363-365 ◽

Cited By ~ 8

Author(s):

Szu-Yu Wang ◽

Chih-Yuan Chin ◽

Pei-Ren Jeng ◽

Ling-Wu Yang ◽

Ming-Shiang Chen ◽

...

Keyword(s):

Flash Memory ◽

Gate Oxide ◽

Oxide Degradation

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On the impact of gate oxide degradation on SRAM dynamic and static write-ability

16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011) ◽

10.1109/aspdac.2011.5722278 ◽

2011 ◽

Cited By ~ 3

Author(s):

Vikas Chandra ◽

Robert Aitken

Keyword(s):

Gate Oxide ◽

Oxide Degradation ◽

The Impact

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The Roles of Several E′ Variants in Thermal Gate Oxide Reliability

MRS Proceedings ◽

10.1557/proc-338-37 ◽

1994 ◽

Vol 338 ◽

Cited By ~ 2

Author(s):

John F. Conley ◽

P.M. Lenahan ◽

H.L. Evans ◽

R.K. Lowry ◽

T.J. Morthorst

Keyword(s):

Thin Film ◽

Electron Spin Resonance ◽

Electron Spin ◽

Vacuum Ultraviolet ◽

Charge Injection ◽

Charge Trapping ◽

Gate Oxide ◽

Oxide Reliability ◽

Spin Resonance ◽

Thermally Grown

ABSTRACTWe combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E′ variants in conventionally processed thermally grown thin film SiO2 on Si.

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