Rapid Thermal Annealing of Implanted Layers in Silicon Nitride Encapsulated Gallium Arsenide

1987 ◽  
Vol 134 (10) ◽  
pp. 2560-2565 ◽  
Author(s):  
M. R. Wilson ◽  
P. B. Kosel ◽  
Y. D. Shen ◽  
B. M. Welch
Keyword(s):  
Gallium Arsenide ◽  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Hydrogen Behavior in PECVD Nitride by SiH4 & ND3 During RTA

1996 ◽  
Vol 424 ◽  
Author(s):  
S. S. He ◽  
V. L. Shannon ◽  
T. Nguyen
Keyword(s):  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Wave Numbers ◽  
Thermal Annealing Process

AbstractPECVD silicon nitride was deposited by silane and deuterium ammonia. Silicon rich and nitrogen rich silicon nitride were deposited by varying the ratio of the SiH4/DH3. From FTIR, we found that the wave numbers of SiD and ND shifted lower when compared to SiH and NH bond in the NH3 nitride. In Si-rich nitride, both Si-H and Si-D bonds were found, which is different from N-rich nitride, where only an ND bond was found. Most of the hydrogen in NH(D) comes from the ammonia during PECVD deposition. We found that some of the deuterium exchanges its bonding to silicon from the initial bonding to nitrogen during a rapid thermal annealing process.

Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

1994 ◽  
Vol 64 (20) ◽  
pp. 2652-2654 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
E. F. Krimmel ◽  
K. Bethge ◽  
W. Grill
Keyword(s):  
Electron Beam ◽  
Silicon Nitride ◽  
Surface Structure ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Silicon ◽  
Nitride Layers

Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

2013 ◽  
Vol 47 (11) ◽  
pp. 1470-1474 ◽  
Author(s):  
A. V. Murel ◽  
V. M. Daniltsev ◽  
E. V. Demidov ◽  
M. N. Drozdov ◽  
V. I. Shashkin
Keyword(s):  
Gallium Arsenide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Surface

Rapid thermal annealing of indium-implanted gallium arsenide

1993 ◽  
Vol 59 (1-2) ◽  
pp. 533-536 ◽  
Author(s):  
A. N. Akimov ◽  
L. A. Vlasukova ◽  
F. F. Komarov ◽  
M. Kulik
Keyword(s):  
Gallium Arsenide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
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