Rapid thermal annealing of indium-implanted gallium arsenide

1993 ◽  
Vol 59 (1-2) ◽  
pp. 533-536 ◽  
Author(s):  
A. N. Akimov ◽  
L. A. Vlasukova ◽  
F. F. Komarov ◽  
M. Kulik
Keyword(s):  
Gallium Arsenide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

2013 ◽  
Vol 47 (11) ◽  
pp. 1470-1474 ◽  
Author(s):  
A. V. Murel ◽  
V. M. Daniltsev ◽  
E. V. Demidov ◽  
M. N. Drozdov ◽  
V. I. Shashkin
Keyword(s):  
Gallium Arsenide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Surface

Rapid Thermal Anneal and Furnace Anneal of Silicon and Beryimlum Implanted Gallium Arsenide

1985 ◽  
Vol 45 ◽  
Author(s):  
A.T. Yuen ◽  
S.I. Long ◽  
J.L. Merz
Keyword(s):  
Gallium Arsenide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Activation ◽  
Donor Concentration ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Hall Measurements ◽  
P Type

ABSTRACTA comparison has been made between rapid thermal annealing (RTA) and furnace annealing (FA) of implanted GaAs. Hall measurements showed consistently higher electrical activation of n-type (Si-5E12 cm −2) implants with FA and higher electrical activation of p-type (Be-1E14 cm −2) implants with RTA. Photoluminescence (PL) revealed that for RTA temperatures above 950°C some of the Si was going onto As, acceptor sites, thus reducing the net donor concentration. PL for RTA below 950°C showed signs of incomplete recrystallization. By a technique of “dual implantation” of As and Si into GaAs we were able to force the Si onto Ga-sites resulting in a higher donor concentration after RTA.

Rapid Thermal Annealing of Se-Implanted Gallium Arsenide

1987 ◽  
Vol 92 ◽  
Author(s):  
T. Inada ◽  
K. Miyamoto ◽  
A. Nishida
Keyword(s):  
Gallium Arsenide ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Doping Profile ◽  
Lec Gaas

Rapid thermal annealing by using a graphite strip heater has been employed to activate Se atoms implanted in either In-doped or undoped LEC GaAs. Doping profile measurements have shown that highly doped n-type layers with the maximum carrier concentration of 1.2E19/cm3 are formed in the In-doped GaAs implanted with 100keV Se ions at room temperature after rapid thermal annealing at 1000°C for 10 sec. Residual defects existing in Se-implanted layers have been examined. The results show that the introduction of dislocations into Se-implanted layers during post-implant annealing is minimized in the In-doped GaAs samples treated by rapid thermal annealing.

Rapid Thermal Annealing of Implanted Layers in Silicon Nitride Encapsulated Gallium Arsenide

1987 ◽  
Vol 134 (10) ◽  
pp. 2560-2565 ◽  
Author(s):  
M. R. Wilson ◽  
P. B. Kosel ◽  
Y. D. Shen ◽  
B. M. Welch
Keyword(s):  
Gallium Arsenide ◽  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Rapid thermal annealing of gallium arsenide implanted with sulfur ions

2002 ◽  
Vol 36 (3) ◽  
pp. 250-253
Author(s):  
V. M. Ardyshev ◽  
M. V. Ardyshev
Keyword(s):  
Gallium Arsenide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films
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