scholarly journals Formation of highlyn‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide

1991 ◽  
Vol 58 (11) ◽  
pp. 1190-1192 ◽  
Author(s):  
D. K. Sadana ◽  
J. P. de Souza ◽  
F. Cardone
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rapid Thermal Oxidation

Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films

1997 ◽  
Vol 470 ◽  
Author(s):  
A. T. Fiory
Keyword(s):  
Thermal Oxidation ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Back Side ◽  
Control Accuracy

ABSTRACTTemperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.

N+doping of gallium arsenide by rapid thermal oxidation of a silicon cap

1990 ◽  
Vol 57 (16) ◽  
pp. 1681-1683 ◽  
Author(s):  
D. K. Sadana ◽  
J. P. de Souza ◽  
F. Cardone
Keyword(s):  
Gallium Arsenide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
N Doping

SiGe Nanocrystals Fabricated by One-Step Thermal Oxidation and Rapid Thermal Annealing

2008 ◽  
Vol 11 (4) ◽  
pp. K44 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
M. C. Tsai ◽  
K. M. Fan ◽  
C. H. Lee ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
One Step

Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping

2013 ◽  
Vol 47 (11) ◽  
pp. 1470-1474 ◽  
Author(s):  
A. V. Murel ◽  
V. M. Daniltsev ◽  
E. V. Demidov ◽  
M. N. Drozdov ◽  
V. I. Shashkin
Keyword(s):  
Gallium Arsenide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Surface

Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers

1991 ◽  
Vol 224 ◽  
Author(s):  
Akira Usami ◽  
Taichi Natori ◽  
Akira Ito ◽  
Takahide Sugiyama ◽  
Seiya Hirota ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Epitaxial Layers ◽  
Shallow Trap ◽  
Transient Spectroscopy

AbstractIntroduction of oxygen during thermal oxidation and production of defects by rapid thermal annealing (RTA) in n-type epitaxial Si layers were studied with deep-level transient spectroscopy measurements. We use oxygen-related thermal donors (TDs) as a monitor for introduction of oxygen in silicon epitaxial layers. It is found that oxygen is introduced from the substrate into the epitaxial layer after thermal annealing. The TD was almost annihilated by RTA at .700°C. However, a shallow trap (Ec−0.073±0.005 eV) was induced by RTA.

Rapid thermal annealing of indium-implanted gallium arsenide

1993 ◽  
Vol 59 (1-2) ◽  
pp. 533-536 ◽  
Author(s):  
A. N. Akimov ◽  
L. A. Vlasukova ◽  
F. F. Komarov ◽  
M. Kulik
Keyword(s):  
Gallium Arsenide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
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