Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

1994 ◽  
Vol 64 (20) ◽  
pp. 2652-2654 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
E. F. Krimmel ◽  
K. Bethge ◽  
W. Grill
Keyword(s):  
Electron Beam ◽  
Silicon Nitride ◽  
Surface Structure ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Silicon ◽  
Nitride Layers

Synthesis of buried silicon nitride layers by rapid thermal annealing

1988 ◽  
Vol 164 ◽  
pp. 429-434 ◽  
Author(s):  
C.M.S. Rauthan ◽  
Ami Chand ◽  
Sudhir Chandra ◽  
G. Bose
Keyword(s):  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Nitride Layers

scholarly journals Formation of L10-ordered CoPt during interdiffusion of electron-beam-deposited Pt/Co bilayer thin films on Si/SiO2 substrates by rapid thermal annealing

2020 ◽  
Vol 7 (6) ◽  
pp. 066101 ◽  
Author(s):  
Ryo Toyama ◽  
Shiro Kawachi ◽  
Soshi Iimura ◽  
Jun-ichi Yamaura ◽  
Youichi Murakami ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Hydrogen Behavior in PECVD Nitride by SiH4 & ND3 During RTA

1996 ◽  
Vol 424 ◽  
Author(s):  
S. S. He ◽  
V. L. Shannon ◽  
T. Nguyen
Keyword(s):  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Wave Numbers ◽  
Thermal Annealing Process

AbstractPECVD silicon nitride was deposited by silane and deuterium ammonia. Silicon rich and nitrogen rich silicon nitride were deposited by varying the ratio of the SiH4/DH3. From FTIR, we found that the wave numbers of SiD and ND shifted lower when compared to SiH and NH bond in the NH3 nitride. In Si-rich nitride, both Si-H and Si-D bonds were found, which is different from N-rich nitride, where only an ND bond was found. Most of the hydrogen in NH(D) comes from the ammonia during PECVD deposition. We found that some of the deuterium exchanges its bonding to silicon from the initial bonding to nitrogen during a rapid thermal annealing process.

Ni-catalysed WO3 nanostructures grown by electron beam rapid thermal annealing for NO2 gas sensing

2015 ◽  
Vol 17 (7) ◽  
Author(s):  
Gopalakrishnan Chandrasekaran ◽  
Anuraj Sundararaj ◽  
Helen Annal Therese ◽  
K. Jeganathan
Keyword(s):  
Electron Beam ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gas Sensing ◽  
Wo3 Nanostructures

Surface-near analyses of ultra thin silicon nitride layers by NRA, channeling RBS, FT IR ellipsometry and AFM

1995 ◽  
Vol 353 (5-8) ◽  
pp. 734-739 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
W. Grill ◽  
B. Heinz ◽  
A. R�seler ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ft Ir ◽  
Thin Silicon ◽  
Nitride Layers

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

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