Modeling and Analysis of the Silicon Epitaxial Growth with SiHCl3 in a Horizontal Rapid Thermal Chemical Vapor Deposition Reactor

1997 ◽  
Vol 144 (9) ◽  
pp. 3256-3261 ◽  
Author(s):  
D. Angermeier ◽  
R. Monna ◽  
A. Slaoui ◽  
J. C. Muller
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Modeling And Analysis ◽  
Chemical Vapor Deposition Reactor ◽  
Thermal Chemical Vapor Deposition

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

2013 ◽  
Vol 740-742 ◽  
pp. 251-254
Author(s):  
Milan Yazdanfar ◽  
Pontus Stenberg ◽  
Ian D. Booker ◽  
Ivan.G Ivanov ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Chemical Vapor Deposition Reactor ◽  
Thick Layers

Epitaxial growth of about 200 µm thick, low doped 4H-SiC layers grown on n-type 8° off-axis Si-face substrates at growth rates around 100 µm/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 µm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 µm thick epitaxial layers with excellent morphology.

Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions

2012 ◽  
Vol 717-720 ◽  
pp. 109-112 ◽  
Author(s):  
Milan Yazdanfar ◽  
Stefano Leone ◽  
Henrik Pedersen ◽  
Olof Kordina ◽  
Anne Henry ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Single Molecule ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Reactor ◽  
Defect Control ◽  
Temperature Ramp ◽  
Small Flow

Epitaxial growth of 4H-SiC on 8º off-axis substrates has been performed under different condition during the temperature ramp up in order to study the effect on the carrot defect. The study was done in a hot wall chemical vapor deposition reactor using the single molecule precursor methyltrichlorosilane (MTS). During the temperature ramp up, a small flow of HCl or C2H4 was added to the H2 ambient to study different surface etching conditions. The best result was obtained when HCl was added from 1175 to 1520 °C during the ramp up to growth temperature (1575 °C).

Silicon Nucleation on Silicon Dioxide and Selective Epitaxy In An Ultra-High Vacuum Raptid Thermal Chemical Vapor Deposition Reactor Using Disilane In Hydrogen

1993 ◽  
Vol 334 ◽  
Author(s):  
Katherine E. Violette ◽  
Mahesh K. Sanganeria ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
Dennis M. Maher
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Strong Dependence ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Thermal Chemical Vapor Deposition

AbstractSilicon nucleation on silicon dioxide and selective silicon epitaxial growth (SEG) were studied in an ultra high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) reactor. Experiments were performed using 10% Si2H6 in H2 in a pressure range of 10 - 100 mTorr at 760°C. Under these conditions, the growth rate ranged from 75 to 330 nm/minute. Loss of selectivity via Si island formation on SiO2 was studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealing a strong dependence on deposition pressure. Cross sectional transmission electron microscopy (XTEM) was employed to study the vertical oxide/epitaxy interface where faceting can occur. The incubation time for nucleation was found to increase from 10s to 70s as pressure is reduced from 100 mTorr to 10 mTorr, allowing thicker selective epitaxial film growth in spite of the reduced growth rates. This was attributed to the reduction in gas phase supersaturation of the Si containing species resulting in a lower density of adsorbed atoms on the SiO2 surface. This process shows a potential for chlorine free selective epitaxial growth and provides insight to the surface morphology of polycrystalline films deposited at low pressures.

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