Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

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Systematic investigation of the growth kinetics of β-Ga2O3 epilayer by plasma enhanced chemical vapor deposition

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Vol 116 (7) ◽  
pp. 072102 ◽  
Author(s):  
C. Wu ◽  
D. Y. Guo ◽  
L. Y. Zhang ◽  
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