scholarly journals Microcrystalline Silicon Film Deposition from  H 2 ‐ He ‐ SiH4 Using Remote Plasma Enhanced Chemical Vapor Deposition

1998 ◽  
Vol 145 (8) ◽  
pp. 2900-2904 ◽  
Author(s):  
Sung‐Woo Lee ◽  
Du‐Chang Heo ◽  
Jin‐Kyu Kang ◽  
Young‐Bae Park ◽  
Shi‐Woo Rhee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Microcrystalline Silicon ◽  
Remote Plasma ◽  
Microcrystalline Silicon Film

Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 377 ◽  
Author(s):  
G. Stevens ◽  
P. Santos-Filho ◽  
S. Habermehl ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Pathway ◽  
Total Concentration ◽  
Chemical Vapor ◽  
Reaction Model ◽  
Film Deposition ◽  
Growth Surface ◽  
Remote Plasma ◽  
Silicon Nitride Films

ABSTRACTWe have deposited Si-nitride thin films by remote plasma-enhanced chemical-vapor deposition using different combinations of hydrogen and deuterium source gases. In one set of experiments, NH3 and SiH4 were injected downstream from a He plasma and the ratio of NH3 to SiH4 was adjusted so that deposited films contained IR-detectable bonded-H in SiN-H arrangements, but not in Si-H arrangements. Similar results were obtained using the same ND3 to SiD4 flow ratio; these films contained only SiN-D groups. However, films prepared from ND3 and SiH4 displayed both SiN-D and SiN-H groups in essentially equal concentrations establishing that H and D atoms bonded to N are derived from both source gases SiH (D) 4 and NH (D) 3, and further that inter-mixing of H and/or D atoms occurs at the growth surface. This reaction pathway is supported by additional studies in which films were grown from SD4 and ND3 with either i) He or ii) He/H2 mixtures being plasma excited. The films grown from the deuterated source gases without H2, displayed only SiN-D bands, whereas the films grown using the He/H2 mixture displayed both SiN-H and SiN-D bands. The total concentration of N-H and N-D bonds in the films grown from the He/H2 excitation was the same as the concentration of N-D, supporting the surface reaction model. In-situ mass spectrometry provides additional insights in the film deposition reactions.

The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd).

1987 ◽  
Vol 105 ◽  
Author(s):  
Sang S. Kim ◽  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Energy ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Semiconductor Surface ◽  
Remote Plasma

AbstractWe have constructed an Ultra High Vacuum (UHV) multichamber system and have deposited ‘gate quality’ silicon dioxide by the remote plasma enhanced chemical vapor deposition (Remote PECVD) process at low substrate temperatures (Ts ≤400 °C). Native oxides and other surface contaminants are removed under ultra high vacuum (UHV) conditions and the character of the semiconductor surface is determined prior to film deposition using in-situ Reflection High Energy Electron Defraction (RHEED). Measurents made on MOS structures of capacitance-voltage, current-voltage, field break-down, hysteresis, and mobile ion drift indicate that these films are ‘comparable’ to thermally (Ts >1100 °C) grown oxides. The structural properties of the films arg studied by ir spectroscopy and ellipsometry.

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