Effects of oxygen doping on properties of microcrystalline silicon film grown using rapid thermal chemical vapor deposition

1993 ◽  
Vol 22 (11) ◽  
pp. 1345-1351 ◽  
Author(s):  
X. L. Xu ◽  
V. Misra ◽  
M. C. Öztürk ◽  
J. J. Wortman ◽  
G. S. Harris ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Oxygen Doping ◽  
Thermal Chemical Vapor Deposition ◽  
Microcrystalline Silicon Film

Characterization of Oxygen-Doped and Non-Oxygen-Doped Polysilicon Films Prepared by Rapid Thermal Chemical Vapor Deposition

1993 ◽  
Vol 303 ◽  
Author(s):  
Xiaoli Xu ◽  
Veena Misra ◽  
Gari S. Harris ◽  
Lycourgos Spanos ◽  
Mehmet C. Öztiirk ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Breakdown Strength ◽  
Chemical Vapor ◽  
Oxygen Doping ◽  
Thermal Chemical Vapor Deposition ◽  
Electrical Resistivities ◽  
Polysilicon Films

ABSTRACTPolySi films deposited with and without oxygen doping using rapid thermal chemical vapor deposition (RTCVD) have been investigated. Experimental results show that RTCVD systems can be used to provide high deposition rates ( 900-1000 Å/min at 700 °C) for both oxygen-doped and non-oxygen-doped polySi films. The surface roughness of the RTCVD polySi film is about half that of conventional LPCVD polySi films. The surface roughness and grain size of the RTCVD polySi film can be further reduced using oxygen doping. The catastrophic breakdown strength for capacitors using oxygen-doped polySi electrodes are improved compared with the breakdown strength for capacitors using non-oxygen-doped polySi electrodes. Electrical resistivities of B, P and As doped samples of polySi films with oxygen doping are found to be larger than those of polySi films without oxygen doping. Resistivities of silicides formed on the oxygen-doped polySi samples are approximately the same for those of silicides formed on non-oxygen-doped polySi samples.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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