Electroluminescence of Heavily Doped p‐Type Porous Silicon under Electrochemical Oxidation in Galvanostatic Regime

1996 ◽  
Vol 143 (3) ◽  
pp. 1055-1061 ◽  
Author(s):  
S. Billat
Keyword(s):  
Porous Silicon ◽  
Electrochemical Oxidation ◽  
Galvanostatic Regime ◽  
Heavily Doped ◽  
P Type

Electroluminescence of heavily doped p-type porous silicon under electrochemical oxidation in the potentiostatic regime

1995 ◽  
Vol 263 (2) ◽  
pp. 238-242 ◽  
Author(s):  
S. Billat ◽  
F. Gaspard ◽  
R. Hérino ◽  
M. Ligeon ◽  
F. Muller ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Oxidation ◽  
Heavily Doped ◽  
P Type ◽  
Potentiostatic Regime

scholarly journals Macropore Formation and Pore Morphology Characterization of Heavily Doped p-Type Porous Silicon

2019 ◽  
Vol 166 (2) ◽  
pp. B9-B12 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Paula Martínez-Pérez ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Pore Morphology ◽  
Heavily Doped ◽  
P Type ◽  
Morphology Characterization ◽  
Macropore Formation

In-Situ Photoluminescence Investigation of the Initial Porous Silicon Formation in 0.2M NH4F (pH 3.2)

1996 ◽  
Vol 452 ◽  
Author(s):  
T. Dittrich ◽  
V. Y. Timoshenko ◽  
J. Rappich
Keyword(s):  
Porous Silicon ◽  
Surface Recombination ◽  
Current Switch ◽  
Current Voltage ◽  
Galvanostatic Regime ◽  
Pl Intensity ◽  
Rapid Current ◽  
Si Nanostructures ◽  
P Type

AbstractThe porous silicon (por-Si) formation in 0.2M NH4F (pH 3.2) is investigated in-situ by photoluminescence (PL). The p-type Si(100) samples are treated electrochemically in the galvanostatic regime starting from Ihe hydrogenated surface. Single pulses of a N2 laser are used to probe stroboscopically the radiative band-band recombination of the bulk c-Si and the PL of por-Si. The PL intensity of c-Si is correlated with the current density during the current-voltage scan and indicates changes of surface recombination by the onset of chemical reactions. The PL intensity of c-Si increases rapidly after switching off the anodic current while the PL intensity of por-Si is not influenced by the rapid current switch. This shows that the passivation of the surfaces of the Si nanostructures is not affected by the por-Si formation at the surface of the bulk c-Si.

scholarly journals Pore Morphology of Heavily Doped P-Type Porous Silicon

Proceedings ◽  
2018 ◽  
Vol 4 (1) ◽  
pp. 14 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Organic Solvent ◽  
Potassium Hydroxide ◽  
Pore Diameter ◽  
Strong Dependence ◽  
Pore Morphology ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Macropore Formation

Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (<5 nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we present the results of using dimethylformamide (DMF), dimethylsulfoxide (DMSO), potassium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with a resistivity between 0.001 and 0.02 Ω∙cm, achieving pore sizes from 5 to 100 nm.

Formation of Porous Silicon Layers on Insulating Substrate for Microbridge – Type Sensor Applications

2004 ◽  
Vol 828 ◽  
Author(s):  
Sergey Ya. Andrushin ◽  
Leonid A. Balagurov ◽  
Sue C. Bayliss ◽  
Galina V. Liberova ◽  
Elena A. Petrova ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Polycrystalline Silicon ◽  
Sacrificial Layer ◽  
Fabrication Process ◽  
Formation Processes ◽  
Sensor Applications ◽  
Heavily Doped ◽  
P Type

ABSTRACTFormation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical formation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures.

Temperature effect on the roughness of the formation interface of p-type porous silicon

1998 ◽  
Vol 84 (6) ◽  
pp. 3129-3133 ◽  
Author(s):  
S. Setzu ◽  
G. Lérondel ◽  
R. Romestain
Keyword(s):  
Porous Silicon ◽  
Temperature Effect ◽  
P Type

Analysis of Defects in Heavily-Doped MBE-GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
C.B. Carter ◽  
D.M. Desimone ◽  
H.T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Liquid Phase ◽  
Molecular Beam ◽  
Type Material ◽  
Grown Layer ◽  
Defect Clusters ◽  
Complex Defect ◽  
Heavily Doped ◽  
Rich Material ◽  
P Type ◽  
Very High

ABSTRACTGaAs Has Been Grown By Molecular-Beam Epitaxy (MBE) With Large Concentrations (∼1018CM−2) Of Sn, Si, Ge, And Mn As Dopants. The Heavily-Doped N-Type Material Has Been Found To Contain Regions Of A Very High Dislocation Density. An Analysis Of The Less Complex Defect Areas Shows That The Dislocations Originate In The MBE-Grown Layer. These Observations And Others On More Complex Defect Clusters Are Compared With Recent Studies Of Defects In Material Grown By Liquid Phase Epitaxy (LPE). The More Heavily Doped P-Type Material Contains Discs Of Mn-Rich Material At The Surface Of The MBEgrown Epilayer. Both The Structure And Composition Of These Regions Have Been Examined.

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