In-Situ Photoluminescence Investigation of the Initial Porous Silicon Formation in 0.2M NH4F (pH 3.2)

1996 ◽  
Vol 452 ◽  
Author(s):  
T. Dittrich ◽  
V. Y. Timoshenko ◽  
J. Rappich
Keyword(s):  
Porous Silicon ◽  
Surface Recombination ◽  
Current Switch ◽  
Current Voltage ◽  
Galvanostatic Regime ◽  
Pl Intensity ◽  
Rapid Current ◽  
Si Nanostructures ◽  
P Type

AbstractThe porous silicon (por-Si) formation in 0.2M NH4F (pH 3.2) is investigated in-situ by photoluminescence (PL). The p-type Si(100) samples are treated electrochemically in the galvanostatic regime starting from Ihe hydrogenated surface. Single pulses of a N2 laser are used to probe stroboscopically the radiative band-band recombination of the bulk c-Si and the PL of por-Si. The PL intensity of c-Si is correlated with the current density during the current-voltage scan and indicates changes of surface recombination by the onset of chemical reactions. The PL intensity of c-Si increases rapidly after switching off the anodic current while the PL intensity of por-Si is not influenced by the rapid current switch. This shows that the passivation of the surfaces of the Si nanostructures is not affected by the por-Si formation at the surface of the bulk c-Si.

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

An Alternate Mechanism for Porous Si Photoluminescence: Recombination in SiHx Complexes

1991 ◽  
Vol 256 ◽  
Author(s):  
S. M. Prokes ◽  
O. J. Glembocki ◽  
V. M. Bermudez ◽  
R. Kaplan ◽  
L. E. Friedersdorf ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Porous Silicon ◽  
Hydrogen Content ◽  
Hydrogen Desorption ◽  
Porous Si ◽  
Temperature Range ◽  
Silicon Hydrides ◽  
Alternate Mechanism ◽  
Pl Intensity

ABSTRACTPorous silicon layers have been formed which exhibit photoluminescence (PL) peaks that do not blueshift with increasing porosity. Hydrogen desorption experiments have been performed in vacuum under anneals between 230°C–390°C. Simultaneous, in-situ PL measurements show that the PL intensity decreases and disappears with decreasing hydrogen content. Infrared spectroscopy (IR) measurements also show loss of hydride species in the same temperature range. These results indicate that hydrogen is important in the PL process. We suggest that silicon hydrides are the source of PL in porous SI.

scholarly journals In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1314
Author(s):  
Cristian Felipe Ramirez-Gutierrez ◽  
Ivan Alonso Lujan-Cabrera ◽  
Cesar Isaza ◽  
Ely Karina Anaya Rivera ◽  
Mario Enrique Rodriguez-Garcia
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Porous Silicon ◽  
Effective Medium Theory ◽  
Pore Geometry ◽  
Medium Theory ◽  
Specular Reflectance ◽  
Silicon Thin Films ◽  
P Type

Porous silicon (PSi) on p++-type (111) silicon substrate has been fabricated by electronically etching method in hydrofluoric acid (HF) media from 5 to 110 mA/cm2 of anodizing current density. The problem of determining the optical properties of (111) PSi is board through implementing a photoacoustic (PA) technique coupled to an electrochemical cell for real-time monitoring of the formation of porous silicon thin films. PA amplitude allows the calculation of the real part of the films refractive index and porosity using the reflectance self-modulation due to the interference effect between the PSi film and the substrate that produces a periodic PA amplitude. The optical properties are studied from specular reflectance measurements fitted through genetic algorithms, transfer matrix method (TMM), and the effective medium theory, where the Maxwell Garnett (MG), Bruggeman (BR), and Looyenga (LLL) models were tested to determine the most suitable for pore geometry and compared with the in situ PA method. It was found that (111) PSi exhibit a branched pore geometry producing optical anisotropy and high scattering films.

Photoconductivity and Carrier Transport in Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
M. J. Heben ◽  
Y. S. Tsuo
Keyword(s):  
Porous Silicon ◽  
Transport Properties ◽  
Carrier Transport ◽  
Excitation Wavelength ◽  
Tunneling Mechanism ◽  
Photocurrent Spectroscopy ◽  
Current Voltage ◽  
P Type ◽  
Silicon Based ◽  
Photocurrent Spectra

ABSTRACTWe present results from our investigations of the transport properties of p-type Si/porous silicon/Au devices. Current-voltage measurements were performed as a function of temperature from room temperature down to 23K and indicate that a tunneling mechanism governs the transport properties of these devices. Photocurrent spectroscopy measurements were performed as a function of temperature and excitation wavelength and support the conclusion that a tunneling mechanism is operative in these devices. The external quantum efficiencies of our porous-silicon-based structures can be greater than 20%, and the shape of the photocurrent spectra of porous-silicon-based devices, when compared to that of a p-type Si/Au diode, suggests that carriers photogenerated within porous silicon can be collected in an external circuit.

GLANCING ANGLE REACTIVE PULSED LASER DEPOSITION (GRPLD) FOR Bi2O3/Si HETEROSTRUCTURE

2013 ◽  
Vol 27 (16) ◽  
pp. 1350122 ◽  
Author(s):  
EVAN T. SALIM ◽  
MARWA S. AL WAZNY ◽  
MAKRAM A. FAKHRY
Keyword(s):  
Crystalline Silicon ◽  
Silicon Substrates ◽  
In Situ Oxidation ◽  
Current Voltage ◽  
Glancing Angle ◽  
Heterojunction Device ◽  
Oxide Particles ◽  
Current Voltage Characteristics ◽  
P Type

Thin films of micro bismuth oxide particles were successfully prepared by in situ oxidation of the laser ablated bismuth metal. (111) oriented p-type crystalline silicon substrates were used. The effects of substrate tiled angle on the characteristics of the prepared film were studied. Also, the performance of n- Bi 2 O 3/p- Si heterojunction device was investigated. The obtained current–voltage characteristics in dark and under illumination insure the dependence of the fabricated device characteristic on the deposition angle. The I–V characteristics show that all prepared devices are of abrupt type.

scholarly journals In situ FT-IR Study of p-Type Porous Silicon during Electroluminescence Process

1994 ◽  
Vol 62 (6) ◽  
pp. 540-541 ◽  
Author(s):  
Toshihiro KONDO ◽  
Young You KIM ◽  
Kohei UOSAKI
Keyword(s):  
Porous Silicon ◽  
Ft Ir ◽  
Ir Study ◽  
P Type

scholarly journals Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

2017 ◽  
Vol 72 ◽  
pp. 28-36 ◽  
Author(s):  
Hasan A. Hadi
Keyword(s):  
Porous Silicon ◽  
Ideality Factor ◽  
Thermal Evaporation ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Etching Time ◽  
Dynamic Resistance ◽  
Current Voltage ◽  
The One ◽  
P Type

In this work, porous silicon layers were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. Al films were deposited onto porous layer /Si wafers by thermal evaporation to form rectifying junction. An investigation of the dependence on applied etching time to formed PS layer was studied. Effect etching time on the electrical properties of porous silicon is checked using Current–voltage I–V characteristics. The ideality factor and dynamic resistances are found to be large than the one and 20 (kΩ) respectively by the analysis of the dark I–V characteristics of Al/PS/p-Si heterojunction.

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