scholarly journals Macropore Formation and Pore Morphology Characterization of Heavily Doped p-Type Porous Silicon

2019 ◽  
Vol 166 (2) ◽  
pp. B9-B12 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Paula Martínez-Pérez ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Pore Morphology ◽  
Heavily Doped ◽  
P Type ◽  
Morphology Characterization ◽  
Macropore Formation

scholarly journals Pore Morphology of Heavily Doped P-Type Porous Silicon

Proceedings ◽  
2018 ◽  
Vol 4 (1) ◽  
pp. 14 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Organic Solvent ◽  
Potassium Hydroxide ◽  
Pore Diameter ◽  
Strong Dependence ◽  
Pore Morphology ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Macropore Formation

Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (<5 nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we present the results of using dimethylformamide (DMF), dimethylsulfoxide (DMSO), potassium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with a resistivity between 0.001 and 0.02 Ω∙cm, achieving pore sizes from 5 to 100 nm.

Organic-Inorganic Junctions formed on Porous Silicon: Isolation of a Surface Configuration primary to the Luminescence Mechanism.

1992 ◽  
Vol 283 ◽  
Author(s):  
T. R. Cottrell ◽  
J. B. Benziger ◽  
J. C. Yee ◽  
J. K. M. Chunt ◽  
A. B. Bocarslyt
Keyword(s):  
Porous Silicon ◽  
Conducting Polymers ◽  
Ohmic Contacts ◽  
Primary Component ◽  
Solution Ph ◽  
Porous Silicon Surface ◽  
Surface Configuration ◽  
Schottky Type ◽  
P Type

ABSTRACTOrganic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3–4 is a primary component in the luminescence mechanism of porous silicon.

Electroluminescence of heavily doped p-type porous silicon under electrochemical oxidation in the potentiostatic regime

1995 ◽  
Vol 263 (2) ◽  
pp. 238-242 ◽  
Author(s):  
S. Billat ◽  
F. Gaspard ◽  
R. Hérino ◽  
M. Ligeon ◽  
F. Muller ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Oxidation ◽  
Heavily Doped ◽  
P Type ◽  
Potentiostatic Regime

Electrochemical and Chemical Deposition of II-VI Semiconductors in Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
R. Herino ◽  
M. Gros-Jean ◽  
L. Montes ◽  
D. Lincot
Keyword(s):  
Porous Silicon ◽  
Chemical Deposition ◽  
Porous Films ◽  
Concentration Gradients ◽  
Strong Concentration ◽  
Acidic Solutions ◽  
Semiconductor Compounds ◽  
Metallic Cations ◽  
P Type

AbstractThe introduction of II-VI semiconductor compounds into porous silicon layers has been investigated in order to obtain transparent and conducting contacts with the inner surface of the material. CdTe and ZnSe have been electrodeposited cathodically on n type nanoporous electrodes from acidic solutions containing the metallic cations and dissolved oxides of selenium or tellurium. CdS incorporation into p-type porous silicon has been achieved by chemical bath deposition, from solutions containing cadmium complexes and thioacetamid as a sulfur donor. Characterization of the deposits has been performed by SEM observations, X-ray analysis and RBS. Results confirm the penetration of the compounds into the porous films, with small to strong concentration gradients in thickness depending on the deposition method. After deposition and sample drying, the luminescence of CdTe embedded layers has almost disappeared, whereas those containing ZnSe and CdS show a photoluminescence efficiency which is not severely degraded.

Fabrication and characterization of p-type heavily doped silicon quantum dots

2017 ◽  
Author(s):  
S. Mizoguchi ◽  
N. Shimatani ◽  
T. Makino ◽  
Y. Yamaoka ◽  
T. Kodera
Keyword(s):  
Quantum Dots ◽  
Silicon Quantum Dots ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Fabrication And Characterization ◽  
P Type
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