Analysis of Defects in Heavily-Doped MBE-GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
C.B. Carter ◽  
D.M. Desimone ◽  
H.T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Liquid Phase ◽  
Molecular Beam ◽  
Type Material ◽  
Grown Layer ◽  
Defect Clusters ◽  
Complex Defect ◽  
Heavily Doped ◽  
Rich Material ◽  
P Type ◽  
Very High

ABSTRACTGaAs Has Been Grown By Molecular-Beam Epitaxy (MBE) With Large Concentrations (∼1018CM−2) Of Sn, Si, Ge, And Mn As Dopants. The Heavily-Doped N-Type Material Has Been Found To Contain Regions Of A Very High Dislocation Density. An Analysis Of The Less Complex Defect Areas Shows That The Dislocations Originate In The MBE-Grown Layer. These Observations And Others On More Complex Defect Clusters Are Compared With Recent Studies Of Defects In Material Grown By Liquid Phase Epitaxy (LPE). The More Heavily Doped P-Type Material Contains Discs Of Mn-Rich Material At The Surface Of The MBEgrown Epilayer. Both The Structure And Composition Of These Regions Have Been Examined.

Native Defects, Diffusion, Self-Compensation, and Boron Doping in Cubic Silicon Carbide

1989 ◽  
Vol 162 ◽  
Author(s):  
C. Wang ◽  
J. Bemholc ◽  
R. F. Davis
Keyword(s):  
Silicon Carbide ◽  
Fermi Level ◽  
Theoretical Investigation ◽  
Boron Doping ◽  
Native Defects ◽  
Heavily Doped ◽  
Rich Material ◽  
P Type ◽  
Cubic Silicon Carbide

ABSTRACTWe report the results of a comprehensive theoretical investigation of the effects of stoichiometry and boron doping on the properties of cubic SiC. Supercell calculations using ab initio pseudopotentials show that the lowest energy defect in Si-rich n-type and intrinsic SiC is the electrically inactive Sic antisite, while VC++ is the lowest energy defect in p-type SiC. The electrons released by the carbon vacancies compensate acceptor dopants and lead to strong self-compensation effects when doping occurs during the growth of crystal. In C-rich SiC the dominant defect for all Fermi level positions is the electrically inactive CSi antisite. In stoichiometric and Si-rich cubic SiC, the BC site is energetically preferred, while BC and BSi have similar incorporation energies in C-rich material. In heavily doped p-type SiC the diffusion of BC proceeds by the dissociative (Frank-Turnbull) mechanism.

Minoritary Transport in Heavily Doped p-type InGaAs

2009 ◽  
Vol 1230 ◽  
Author(s):  
Eric Tea ◽  
Frederic Aniel
Keyword(s):  
Figure Of Merit ◽  
Polar Optical Phonon ◽  
Acceptor Doping ◽  
Majority Carrier ◽  
Heavily Doped ◽  
Carrier Doping ◽  
P Type ◽  
Transport Method ◽  
Very High ◽  
Key Parameter

AbstractMinoritary carrier’s transport properties are of fundamental importance in the HBT’s physics. The base transit time is a key parameter to improve microwave figure of merit. Some recent minoritary electron mobilities measurements versus acceptor doping level using magneto transport method exhibit a dramatic increase at very high majority carrier concentration. This effect has been attributed to the coupling of polar optical phonons with hole plasmons (LOPC) which controls the balance between enegy gain by electric field acceleration and energy loss by polar optical phonon emission. We present minoritary mobilities as a function of majority carrier doping calculated in the frame of electrons and holes Monte Carlo modelling including LOPC.

scholarly journals Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source

2002 ◽  
Vol 719 ◽  
Author(s):  
Rob Armitage ◽  
Qing Yang ◽  
Henning Feick ◽  
Yeonjoon Park ◽  
Eicke R. Weber
Keyword(s):  
Optical Properties ◽  
Carbon Tetrachloride ◽  
Molecular Beam Epitaxy ◽  
Carbon Content ◽  
Molecular Beam ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Heavily Doped ◽  
P Type ◽  
Dopant Source

AbstractCarbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (<5×1020 cm-3) were actually ntype rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow (∼6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

Native Defects in Diamond, Sic, and Si: Energetics and Self-Diffusion

1988 ◽  
Vol 141 ◽  
Author(s):  
A. Antonelli ◽  
C. Wang ◽  
J. Bemholc ◽  
R. F. Davis
Keyword(s):  
Group Iv ◽  
Type Material ◽  
Native Defects ◽  
Self Diffusion ◽  
Direct Exchange ◽  
Group Iv Semiconductors ◽  
Relative Contribution ◽  
Diffusion Phenomena ◽  
Rich Material ◽  
P Type

AbstractWe have investigated, via first principles total energy calculations, the energetics of elementary native defects in group IV semiconductors. Its implications on the relative abundance of these defects and self-diffusion phenomena are analyzed. The results show that in diamond the self-diffusion is dominated by vacancies, because the interstitial and direct exchange mechanisms have much greater activation energy. In SiC stoichiometry plays an important role. For Si-rich compound, Sic-antisite is the dominant defect in the intrinsic and p-type material, while the carbon vacancy is dominant in the n-type material. For C-rich material, the Csi-antisite is dominant regardless the position of the Fermi level. In Si, it well-known that the vacancy, interstitial and direct exchange mechanisms have very similar activation energies. Our results suggest that self-diffusion experiments carried out at various pressures can determine the relative contribution of each of these mechanisms.

Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs

1993 ◽  
Vol 143-147 ◽  
pp. 265-270 ◽  
Author(s):  
M.J. Ashwin ◽  
R. Addinall ◽  
M.R. Fahy ◽  
R.C. Newman ◽  
I. Silier ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Molecular Beam ◽  
Liquid Phase Epitaxial ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
P Type

New Complex Defect in Heavily Doped GaAs:Zn Grown by Liquid Phase Epitaxy

1998 ◽  
Vol 210 (2) ◽  
pp. 317-320 ◽  
Author(s):  
T.S. Shamirzaev ◽  
K.S. Zhuravlev ◽  
N.A. Yakusheva ◽  
I.P. Petrenko
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Complex Defect ◽  
Heavily Doped

Implantation-Induced Conductivity of Polymers

1983 ◽  
Vol 27 ◽  
Author(s):  
B. Wasserman ◽  
G. Braunstein ◽  
M.S. Dresselhaus ◽  
G.E. Wnek
Keyword(s):  
Ion Implantation ◽  
Temperature Dependence ◽  
Type Material ◽  
Metallic Behavior ◽  
One Dimensional ◽  
Exponential Law ◽  
Phenylene Oxide ◽  
Insulating Polymers ◽  
P Type ◽  
Very High

ABSTRACTIon implantation causes an increase by ~14 orders of magnitude in the electricalconductivity of normally insulating polymers such as polyacrylonitrile (PAN), poly(2,6 dimethyl phenylene-oxide) (PPO), and poly (pphenylene sulfide) (PPS), after ion implantation with Br at fluences of 3 × 1015 ions/cm2. The temperature dependence of the dc conductivity was measured in the range 23 〈 T 〈 293 K and results show an exponential law σ ~ exp(−To/T)a) for PAN, PPO and PPS with α =1/2, suggesting a one-dimensional hopping mechanism. The temperature dependence of the thermoelectric power (TEP) identifies the sign of the dominant carrier type. The TEP exhibits linear metallic behavior, with small magnitudes (~3μV/K), and shows Br implantation to yield p-type material in PPS and n-type material in PAN with extremely low values of mobility (〈 10−3 cm2/V sec) and correspondingly very high values of the carrier concentration estimated to be 5 × 1022 cm-3. Results are also reported for the frequency dependence of the AC conductivity and of similarly implanted PPS and PAN samples.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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