MoS2 with Controlled Thickness for Electrocatalytic Hydrogen Evolution

Molybdenum disulfide (MoS2) has moderate hydrogen adsorption free energy, making it an excellent alternative to replace noble metals as hydrogen evolution reaction (HER) catalysts. The thickness of MoS2 can affect its energy band structure and interface engineering, which are the avenue way to adjust HER performance. In this work, MoS2 films with different thicknesses were directly grown on the glassy carbon (GC) substrate by atomic layer deposition (ALD). The thickness of the MoS2 films can be precisely controlled by regulating the number of ALD cycles. The prepared MoS2/GC was directly used as the HER catalyst without a binder. The experimental results show that MoS2 with 200-ALD cycles (the thickness of 14.9 nm) has the best HER performance. Excessive thickness of MoS2 films not only lead to the aggregation of dense MoS2 nanosheets, resulting in reduction of active sites, but also lead to the increase of electrical resistance, reducing the electron transfer rate. MoS2 grown layer by layer on the substrate by ALD technology also significantly improves the bonding force between MoS2 and the substrate, showing excellent HER stability.

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Dislocation behavior during the early stages of physical vapor transport (PVT) growth of 6-inch diameter 4H-SiC crystals has been investigated by synchrotron monochromatic beam X-ray topography (SMBXT) in conjunction with ray tracing simulations of dislocation images. Our studies reveal that most of the TSDs/TMDs are replicated into the newly grown layer while most TEDs are generated by either nucleation in pairs at the growth interface or by redirection of BPDs in the seed crystal. Most BPDs in the newly grown layer are of screw type with and this has been verified by comparison with ray tracing simulated images. TEDs with same and opposite sign of Burgers vector are found to be deflected on to the same basal plane by the overgrowth of macro-steps and they glide in the same and opposite directions respectively. TMDs deflected on to the basal plane by macro-steps get dissociated into c and a components, with the a segment undergoing glide to form V-shaped configurations.

Spectroscopic and Microscopic Correlation of SRO-HFCVD Films on Quartz and Silicon

This work is focused on making a correlation between results obtained by using spectroscopy and microscopy techniques from single and twofold-layer Silicon-Rich Oxide (SRO) films. SRO films single-layer and twofold-layer characterizations were compared considering the conditions as-grown and with thermal treatment at 1100 °C for 60 min in a nitrogen atmosphere. The thickness of the single-layer film is 324.7 nm while for the twofold-layer film it is 613.2 nm; after heat-treated, both thicknesses decreased until 28.8 nm. X-ray Photoelectron Spectroscopy shows changes in the excess-silicon in single-layer SRO films, with 10% in as-grown films and decreases to 5% for the heat-treated films. Fourier Transform Infrared Spectroscopy (FTIR) exhibits three characteristic vibrational modes of SiO2, as well as, the vibrating modes associated with the Si-H bonds, which disappear after the heat treatment. With UV–Vis spectroscopy results we obtained the absorbance and the absorption coefficient for the SRO films in order to calculate the optical bandgap energy (Egopt), which increased with heat-treatment. The energy peaks of the photoluminescence spectra were used to calculate the silicon nanocrystal size, obtaining thus an average size of 1.89 ± 0.32 nm for the as-grown layer, decreasing the size to 1.64 ± 0.01 nm with the thermal treatment. On the other hand, scanning electron microscopy and high-resolution transmission electron microscopy images confirm the thickness of the twofold-layer SRO films as 628 nm for the as-grown layer and 540 nm for the layer with heat-treatment, and the silicon nanocrystal size of 2.3 ± 0.6 nm for the films with thermal treatment.

The Presence of MMP-20 Reinforces Biomimetic Enamel Regrowth

Biomimetic synthesis of artificial enamel is a promising strategy for the prevention and restoration of defective enamel. We have recently reported that a hydrogel system composed of chitosan-amelogenin (CS-AMEL) and calcium phosphate is effective in forming an enamel-like layer that has a seamless interface with natural tooth surfaces. Here, to improve the mechanical system function and to facilitate the biomimetic enamel regrowth, matrix metalloproteinase–20 (MMP-20) was introduced into the CS-AMEL hydrogel. Inspired by our recent finding that MMP-20 prevents protein occlusion inside enamel crystals, we hypothesized that addition of MMP-20 to CS-AMEL hydrogel could reinforce the newly grown layer. Recombinant human MMP-20 was added to the CS-AMEL hydrogel to cleave full-length amelogenin during the growth of enamel-like crystals on an etched enamel surface. The MMP-20 proteolysis of amelogenin was studied, and the morphology, composition, and mechanical properties of the newly grown layer were characterized. We found that amelogenin was gradually degraded by MMP-20 in the presence of chitosan. The newly grown crystals in the sample treated with MMP-20–CS-AMEL hydrogel showed more uniform orientation and greater crystallinity than the samples treated with CS-AMEL hydrogel without MMP-20. Stepwise processing of amelogenin by MMP-20 in the CS-AMEL hydrogel prevented undesirable protein occlusion within the newly formed crystals. As a result, both the modulus and hardness of the repaired enamel were significantly increased (1.8- and 2.4-fold, respectively) by the MMP-20–CS-AMEL hydrogel. Although future work is needed to further incorporate other enamel matrix proteins into the system, this study brings us one step closer to biomimetic enamel regrowth.

Nanoparticles in β-tricalcium phosphate substrate enhance modulation of structure and composition of an octacalcium phosphate grown layer

Nanoparticles in the β-TCP substrate enhance structural modulation of an OCP grown layer.

Effect of different-sized spherical gold nanoparticles grown layer by layer on the sensitivity of an immunochromatographic assay

Effect of different-sized spherical gold nanoparticles grown layer by layer on the sensitivity of immunochromatographic assay.

AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates

The growth of AlGaN solid solutions on 3C-SiC(111)/Si(111) is demonstrated. The residual stress of the grown layer was investigated by high resolution X-ray diffraction (HRXRD) and infrared ellipsometry. Analysis of the HRXRD data showed that the observed lattice distortion was caused partially by hydrostatic pressure and partially by biaxial tension. The residual stress depends on the layer composition and weakly on the growth temperature.

Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth

We introduce a method to grow 4H-SiC single polytype stably by controlling the surface morphology. The polytype transition on on-axis 4H-SiC C-face was investigated from a viewpoint of surface morphology of grown layers. At the area where several hillock-like structures grew adjacently, the polytype transition from 4H-SiC to 6H-SiC or 15R-SiC often occurred. Therefore, we tried a modified seeded method to suppress the formation of hillock-like structures. As a result, the hillock-like structure on the grown layer was dramatically reduced. Moreover, the ratio of 4H-SiC polytype to the whole grown surface was increased to be almost 100%.