Chemical Bonding Structure of Low Dielectric Constant Si:O:C:H Films Characterized by Solid-State NMR

2005 ◽  
Vol 152 (1) ◽  
pp. F7 ◽  
Author(s):  
Pierre-Yves Mabboux ◽  
Karen K. Gleason
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Chemical Bonding ◽  
Solid State Nmr ◽  
Low Dielectric Constant ◽  
Bonding Structure ◽  
Low Dielectric

Spin-coated and PECVD low dielectric constant porous organosilicate films studied by 1D and 2D solid-state NMR

2009 ◽  
Vol 11 (42) ◽  
pp. 9729 ◽  
Author(s):  
Guillaume Gerbaud ◽  
Sabine Hediger ◽  
Michel Bardet ◽  
Laurent Favennec ◽  
Aziz Zenasni ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Solid State Nmr ◽  
Low Dielectric Constant ◽  
Low Dielectric

Ultra Low-dielectric-constant Materials for 65nm Technology Node and Beyond

2004 ◽  
Vol 812 ◽  
Author(s):  
Hao Cui ◽  
Darren Moore ◽  
Richard Carter ◽  
Masaichi Eda ◽  
Peter Burke ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Plasma Damage ◽  
Pore Characteristics ◽  
Hydrogenated Silicon ◽  
Bonding Structure ◽  
Low Dielectric ◽  
Etch Stop ◽  
Low Dielectric Constant Materials

AbstractPore characteristics including pore size distribution, porosity, and pore interconnectivity of PECVD SiCOH inter- layer dielectric (ILD) materials with different dielectric constant (κ) values have been studied. Oxygen plasma damage to SiCOH low-κ films increases dramatically as the κ value decreases. Simulations showed that, compared to the ILD film, the overhead dielectric films have a significant impact on the overall effective κ (κeff) of the BEOL interconnects. Reducing the κ values of these overhead films helps to alleviate the pressure on the κ value requirement of the ILD materials while still meeting the κeff target. Ultra low-κ (ULK) PECVD hydrogenated silicon carbide (H:SiC) films with a κ of 3.0 have been studied for the etch-stop applications. Studies of the chemical composition and bonding structure suggest that less Si-C networκs are formed and more micro-porosity are incorporated in the ULK H:SiC film. The leakage current of the ULK H:SiC film is found to be about 5 times lower than the H:S iC and H:SiCN films with higher κ values. The etch rate of ULK H:SiC film using a standard SiCOH ILD etch chemistry has been found to be negligible. Such an extremely high etch selectivity maκes these films very good etch-stop layers.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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