SC1 Cleaning Effect on Electrical Characteristics of 256 Mbit Mobile DRAM with Dual Gate Oxide

2004 ◽  
Vol 151 (10) ◽  
pp. G683 ◽  
Author(s):  
Chihoon Lee ◽  
Namhyuk Jo ◽  
Chanseong Hwang ◽  
Hyeong Joon Kim ◽  
Wonshik Lee
Keyword(s):  
Gate Oxide ◽  
Electrical Characteristics ◽  
Dual Gate

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

1997 ◽  
Vol 471 ◽  
Author(s):  
C. M. Park ◽  
J.-H. Jeon ◽  
J.-S. Yoo ◽  
M.-K. Han
Keyword(s):  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
New Device ◽  
Hydrogen Radicals ◽  
Long Channel ◽  
Conventional Device

ABSTARCT:We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

2013 ◽  
Vol 740-742 ◽  
pp. 938-941
Author(s):  
Florian Chevalier ◽  
P. Brosselard ◽  
D. Tournier ◽  
G. Grosset ◽  
L. Dupuy ◽  
...  
Keyword(s):  
Design Methodology ◽  
Vertical Channel ◽  
Optimal Structure ◽  
Electrical Characteristics ◽  
Gate Electrode ◽  
Thermal Oxide ◽  
Dual Gate

This paper presents the methodology for the design of a novel 4H-SiC JFET structure able to sustain 3.3 kV. Comparisons between simulation and characterization res will be made. Taken into account the process limitation, we will also discuss the critical steps and their impact on the electrical characteristics. A design methodology based on Baliga's criterion is proposed to obtain the optimal structure. A 50 nm thick thermal oxide grown above vertical channel and the use of a buried p+ layer as second gate electrode are brand new in front of what is found in literature.

2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

2017 ◽  
Vol 64 (3) ◽  
pp. 960-968 ◽  
Author(s):  
Sanjay Kumar ◽  
Ekta Goel ◽  
Kunal Singh ◽  
Balraj Singh ◽  
Prince Kumar Singh ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Gate Oxide ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Oxide Structure ◽  
Dual Material

Planar dual gate oxide LDMOS structures in 180nm power management technology

2012 ◽  
Author(s):  
Santosh Sharma ◽  
Theodore Letavic ◽  
Yun Shi ◽  
Alain Loiseau ◽  
John-Ellis Monaghan ◽  
...  
Keyword(s):  
Power Management ◽  
Gate Oxide ◽  
Management Technology ◽  
Dual Gate
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