2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

Sanjay Kumar; Ekta Goel; Kunal Singh; Balraj Singh; Prince Kumar Singh; Kamalaksha Baral; Satyabrata Jit

doi:10.1109/ted.2017.2656630

2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2656630 ◽

2017 ◽

Vol 64 (3) ◽

pp. 960-968 ◽

Cited By ~ 72

Author(s):

Sanjay Kumar ◽

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Prince Kumar Singh ◽

...

Keyword(s):

Analytical Modeling ◽

Gate Oxide ◽

Double Gate ◽

Electrical Characteristics ◽

Oxide Structure ◽

Dual Material

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A Comparison of Analytical Modeling of Double Gate and Dual material Double GateTFETs with high-KStacked Gate-Oxide Structure forLow power Applications

2018 Conference on Emerging Devices and Smart Systems (ICEDSS) ◽

10.1109/icedss.2018.8544357 ◽

2018 ◽

Author(s):

V. Dharshana ◽

A.Yasmina Fathima ◽

S. Harinie ◽

S.M. Bharathi Priamvatha ◽

V. Ajitha ◽

...

Keyword(s):

Analytical Modeling ◽

Gate Oxide ◽

Double Gate ◽

Oxide Structure ◽

Dual Material

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A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- $k$ Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2572610 ◽

2016 ◽

Vol 63 (8) ◽

pp. 3291-3299 ◽

Cited By ~ 64

Author(s):

Sanjay Kumar ◽

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Mirgender Kumar ◽

...

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Double Gate ◽

Electrical Characteristics ◽

Oxide Structure

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Impact of Strain on Electrical Characteristic of Double-Gate TFETs with a SiO2/RfO2Stacked Gate-Oxide Structure

2017 14th IEEE India Council International Conference (INDICON) ◽

10.1109/indicon.2017.8487500 ◽

2017 ◽

Cited By ~ 1

Author(s):

Prince Kumar Singh ◽

Sanjay Kumar ◽

Sweta Chander ◽

Kamalaksha Baral ◽

S. Jit

Keyword(s):

Electrical Characteristic ◽

Gate Oxide ◽

Double Gate ◽

Oxide Structure

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Cited By ~ 1

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Gate Stack ◽

High K ◽

Double Gate Mosfet ◽

Dual Material

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Low-K Dielectric Pocket and Workfunction Engineering for DC and Analog/RF Performance Improvement in Dual Material Stack Gate Oxide Double Gate TFET

Silicon ◽

10.1007/s12633-020-00822-6 ◽

2020 ◽

Author(s):

Dharmender ◽

Kaushal Nigam

Keyword(s):

Performance Improvement ◽

Gate Oxide ◽

Double Gate ◽

Rf Performance ◽

Dual Material ◽

Low K

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2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2773560 ◽

2018 ◽

Vol 65 (1) ◽

pp. 331-338 ◽

Cited By ~ 31

Author(s):

Sanjay Kumar ◽

Kunal Singh ◽

Sweta Chander ◽

Ekta Goel ◽

Prince Kumar Singh ◽

...

Keyword(s):

Current Model ◽

Drain Current ◽

Gate Oxide ◽

Double Gate ◽

Oxide Structure

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Analytical modeling and simulation of dual material double gate all around tunnel field effect transistor using MATLAB

2017 International Conference on Innovations in Information, Embedded and Communication Systems (ICIIECS) ◽

10.1109/iciiecs.2017.8276039 ◽

2017 ◽

Author(s):

R Helen Ramya Bharathi ◽

P. Karthikeyan

Keyword(s):

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Dual Material

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A Simulation Based Study for Electrical Characteristics of SOI TFETs With Ferroelectric Stacked Gate Oxide Structure

2017 14th IEEE India Council International Conference (INDICON) ◽

10.1109/indicon.2017.8487525 ◽

2017 ◽

Author(s):

Sanjay Kumar ◽

Ashvini Rahangdale ◽

Sweta Chander ◽

Prince Kumar Singh ◽

Kamalaksha Baral ◽

...

Keyword(s):

Gate Oxide ◽

Electrical Characteristics ◽

Oxide Structure ◽

Simulation Based

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Pearson-IV type doping distribution-based analytical modeling of dual-material double-gate fully-depleted silicon-on-insulator MOSFET

Microwave and Optical Technology Letters ◽

10.1002/mop.22319 ◽

2007 ◽

Vol 49 (4) ◽

pp. 979-986

Author(s):

Alok Kushwaha ◽

Manoj K Pandey ◽

A. K Gupta

Keyword(s):

Analytical Modeling ◽

Silicon On Insulator ◽

Double Gate ◽

Fully Depleted ◽

Dual Material

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Quantum Analytical Modeling for Device Parameters and I-V Characteristics of Nanoscale Dual-Material Double-Gate Silicon-on-Nothing MOSFET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2332400 ◽

2014 ◽

Vol 61 (8) ◽

pp. 2697-2704 ◽

Cited By ~ 13

Author(s):

Sharmistha Shee ◽

Gargee Bhattacharyya ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Dual Material

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