Structural, Electrical, and Mechanical Properties Development during Curing of Low-k Hydrogen Silsesquioxane Films

2002 ◽  
Vol 149 (3) ◽  
pp. F9 ◽  
Author(s):  
Yvete Toivola ◽  
Jeremy Thurn ◽  
Robert F. Cook
2020 ◽  
Vol 4 (7) ◽  
Author(s):  
Travis D. Frazer ◽  
Joshua L. Knobloch ◽  
Jorge N. Hernández-Charpak ◽  
Kathleen M. Hoogeboom-Pot ◽  
Damiano Nardi ◽  
...  

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).


2021 ◽  
Author(s):  
I. S. Ovchinnikov ◽  
D. S. Seregin ◽  
D. A. Abdullaev ◽  
K. A. Vorotilov ◽  
A. A. Rezvanov ◽  
...  
Keyword(s):  

2020 ◽  
Vol 8 (22) ◽  
pp. 7476-7484 ◽  
Author(s):  
Xudong Zhou ◽  
Xiaoyun Liu ◽  
Zhongkai Cui ◽  
Jinlou Gu ◽  
Shaoliang Lin ◽  
...  

A new-type of hollow silica@ZIF-8 (HMS@ZIF-8) particle was successfully designed, fabricated and introduced into the fluorinated polybenzoxazole (6FPBO) matrix to prepare the HMS@ZIF-8/6FPBO composite film.


2000 ◽  
Vol 147 (3) ◽  
pp. 1186 ◽  
Author(s):  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
Ya-Liang Yang ◽  
Yi-Fang Cheng ◽  
Jae-Kyun Lee ◽  
...  

2005 ◽  
Vol 863 ◽  
Author(s):  
Bum-Gyu Choi ◽  
Byung Ro Kim ◽  
Myung-Sun Moon ◽  
Jung-Won Kang ◽  
Min-Jin Ko

AbstractReducing interline capacitance and line resistance is required to minimize RC delays, reduce power consumption and crosstalk below 100nm node technology. For this purpose, various inorganic- and organic polymers have been tested to reduce dielectric constants in parallel with the use of copper as metal line. Lowering the dielectric constants, in particular, causes the detrimental effect on mechanical properties, and then leads to film damage and/or delamination during chemical-mechanical planarization CMP) or repeated thermal cure cycles. To overcome this issue, new carbon-bridged hybrid materials synthesized by organometallic silane precursors and sol-gel reaction are proposed.In this work, we have developed new organic-inorganic hybrid low-k dielectrics with linear or cyclic carbon bridged structures. The differently bridged carbon structures were formed by a controlled reaction. 1H NMR, 29Si NMR analysis and GC/MSD analysis were conducted for the structural characterization of new hybrid low-k dielectric. The mechanical and dielectric properties of these hybrid materials were characterized by using nanoindentation with continuous stiffness measurement and Al dot MIS techniques. The results indicated that these organic-inorganic hybrid materials were very promising polymers for low-k dielectrics that had low dielectric constants with high thermal and mechanical properties. It has been also demonstrated that electrical and mechanical properties of the hybrid films could be tailored by copolymerization with PMSSQ and through the introduction of porogen.


2006 ◽  
Vol 100 (1) ◽  
pp. 013507 ◽  
Author(s):  
A. Link ◽  
R. Sooryakumar ◽  
R. S. Bandhu ◽  
G. A. Antonelli

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