DIISC-II: Unveiling the Connections between Star Formation and Interstellar Medium in the Extended Ultraviolet Disk of NGC 3344

We present our investigation of the extended ultraviolet (XUV) disk galaxy, NGC 3344, conducted as part of Deciphering the Interplay between the Interstellar medium, Stars, and the Circumgalactic medium survey. We use surface and aperture photometry of individual young stellar complexes to study star formation and its effect on the physical properties of the interstellar medium. We measure the specific star formation rate (sSFR) and find it to increase from 10−10 yr−1 in the inner disk to >10−8 yr−1 in the extended disk. This provides evidence for inside-out disk growth. If these sSFRs are maintained, the XUV disk stellar mass can double in ∼0.5 Gyr, suggesting a burst of star formation. The XUV disk will continue forming stars for a long time due to the high gas depletion times (τ dep). The stellar complexes in the XUV disk have high-ΣH I and low-ΣSFR with τ dep ∼ 10 Gyr, marking the onset of a deviation from the traditional Kennicutt–Schmidt law. We find that both far-ultraviolet (FUV) and a combination of FUV and 24 μm effectively trace star formation in the XUV disk. Hα is weaker in general and prone to stochasticities in the formation of massive stars. Investigation of the circumgalactic medium at 29.5 kpc resulted in the detection of two absorbing systems with metal-line species: the stronger absorption component is consistent with gas flows around the disk, most likely tracing inflow, while the weaker component is likely tracing corotating circumgalactic gas.

Plasma FIB Delayering and Nanoprobing with EBIRCH for Localizing Metal Shorts in DRAM

This paper demonstrates how to localize metal-to-metal short failures in DRAM, where defects can occur over a large area including the aluminum layer, by using the means of mechanical grinding, plasma FIB delayering, and EBIRCH (Electron Beam Induced Resistance Change). Our experiments show that a uniform mechanical grinding of an aluminum layer, and DX PFIB delayering, results in a high quality planer surface in the target layer and site, as the slope created during the grinding is compensated by PFIB delayering. This approach has advantages that are conducive to EBIRCH analysis. First, the target layer can be prepared at any given location (site-free). Second, the defective layer can be delayered to a desired depth without damage (layer-free). Last, after delayering, the surface of the device becomes evenly flat enough to allow the electron beam to evenly penetrate the device for EBIRCH analysis (higher-flatness).With the use of more advanced device preparation methods, EBIRCH analysis has a higher chance of successfully localizing metal line/via shorts even in a large region, which includes the aluminum layer.

A New Delayering Application Workflow in Advanced 5nm Technology Device with Xenon Plasma Focus Ion Beam Microscopy

In semiconductor industry, planer analysis is important in many applications such as Passive Voltage Contrast (PVC) and sample preparation for nanoprobing. In order to achieve successful results on the planer surface analysis, a proper delayering technique is critical. As the thickness of metal line, via of Back-End-of Line (BEOL) and contact layer are getting thinner in advanced nodes, we observed convention hand polishing is facing major challenge in endpointing at exactly targeted layer and specific Region of Interest (ROI). In addition, Cobalt process starting from 5nm node brings additional challenges. Cobalt tends to be oxidized easily which becomes not friendly for nanoprobing. The alternative solution to produce good planar surface is to use Plasma Focus Ion Beam (PFIB) technique with patented DX gas assisted. PFIB changes the convention FA workflow and has been proven that the new workflow improves the efficiency of planar failure analysis such as PVC and nanoprobing sample preparation.

Multi frequency multi bit amplitude modulation of spoof surface plasmon polaritons by schottky diode bridged interdigital SRRs

Multi-frequency multi-bit programmable amplitude modulation (AM) of spoof surface plasmon polaritons (SPPs) is realized at millimeter wave frequencies with interdigital split-ring resonators (SRRs) and In-Ga-Zn-O (IGZO) Schottky diodes. Periodic SRRs on a metal line guide both SRR mode and spoof SPP mode, the former of which rejects the spoof SPP propagation at the SRR resonant frequencies. To actively modulate the amplitude of spoof SPPs, IGZO Schottky diodes are fabricated in the SRR gaps, which continuously re-configure SRRs to metallic loops by applying bias. Interdigital gaps are designed in SRRs to increase the capacitance, thus red shifting the resonant frequencies, which significantly broadens the operation bandwidth of multi-frequency AM. Thus, cascading different kinds of interdigital SRRs with Schottky diodes enables multi-frequency multi-bit AM programmable. As a demonstration, a dual-frequency device was fabricated and characterized, which achieved significant multi-bit AM from −12.5 to −6.2 dB at 34.7 GHz and from −26 to −8.5 dB at 50 GHz independently and showed programmable capability.

GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Assessment Of Cl 2 /CHF 3 Mixture For Plasma Etching Process On Barc And Tin Layer For 0.21 µm Metal Line: Silterra Case Study

In wafer fabrication manufacturing, aluminum etching process is a dry plasma etching process used as main process for construction of aluminum (Al) interconnects structures. As customer requirement changed for faster, more reliable and lower cost chips, chip manufacturers have learned to reduce the size of component on a chip in order to achieve those requirements(Ibrahim, Chik, & Hashim, 2016). As the geometry of the chip getting smaller, the width of Al line wiring specification also shrinking. To print the smaller geometry pattern requirement, the thickness in masking process also has to be reduced for better resolution. Such a thinner resist will create a challenge during plasma etching to ensure a minimal resist loss process which required new type of equipment but this research insist to sustain similar equipment. The use of oxide film as a hard mask has been evaluated by other researchers but alternative approach still needed to suit specific requirement of semiconductor factory installation base. This approach does require a process integration change and require a full technology qualification and easily take a lengthy qualification procedures especially when to qualify the existing products. It is worth trying at the situation of no other solution available. The challenge of insufficient margin for the metal line etching process for 0.2 µm width has caused the deformed metal pattern formation. This chemistry study of Cl2/CHF3 as a replacement gas to existing Cl2/O2 to address Organic backside anti refractive coating (OBARC) was evaluated and proven novelty where detail discussed in the following content.

Analysis on the Interference Assembly of Camshaft With Knurled Tube and Cam

Interference joint is one of the most advanced assembly methods for camshaft. In this paper, the mechanism of camshaft interference assembly is analyzed by thick-wall cylinder model. Joining/tortion experiments are done to estimate the joining force and connection strength. The relationship between the torque capacity, joining force and interference of the camshaft is established by the experiment results. Joining force linear increase with the interference, and torque exponential increase with it. The plastic deformation characteristics of knurled teeth on the tube during the joining process are obtained by metallographic observation. The results reveal the metal line changes continuously of the knurled tube. The knurled tooth tip turns over after joining. And elastic limit would be reached in the extrusion region.