Simultaneous Formation of Shallow Junctions and Gate Doping for Dual Gate Structures Using Cobalt Silicone as a Dopant Source

1999 ◽  
Vol 146 (10) ◽  
pp. 3856-3859
Author(s):  
Ji‐Soo Park ◽  
Dong Kyum Sohn ◽  
Jong‐Uk Bae ◽  
Jin Won Park
Keyword(s):  
Simultaneous Formation ◽  
Shallow Junctions ◽  
Dual Gate ◽  
Dopant Source

Spectroscopic Investigations of Borosilicate Glass and Its Application as a Dopant Source for Shallow Junctions

2000 ◽  
Vol 147 (8) ◽  
pp. 3100 ◽  
Author(s):  
M. Nolan ◽  
T. S. Perova ◽  
R. A. Moore ◽  
C. E. Beitia ◽  
J. F. McGilp ◽  
...  
Keyword(s):  
Borosilicate Glass ◽  
Spectroscopic Investigations ◽  
Shallow Junctions ◽  
Dopant Source

Formation of Cobalt Silicides in Arsenic Implanted Cobalt on Silicon System

1990 ◽  
Vol 181 ◽  
Author(s):  
A.R. Sitaram ◽  
S.P. Murarka
Keyword(s):  
Ion Implantation ◽  
Cobalt Disilicide ◽  
Furnace Annealing ◽  
Silicide Layer ◽  
Cobalt Films ◽  
Contact Metallization ◽  
Shallow Junctions ◽  
Silicon System ◽  
Cobalt Silicides ◽  
Dopant Source

ABSTRACTThe importance of self aligned cobalt disilicide technology for gate and interconnection, and contact metallization cannot be overemphasized. Simultaneously, the concept of forming shallow junctions by using the metal or silicide layer as a dopant source is gaining prominence. In this work, we will present and discuss the results of the effect of arsenic, implanted into cobalt films on silicon, on the Co-Si reaction. Arsenic redistribution during the reaction, both during furnace annealing and RTA, and the effect of ion implantation and dose and energy will also be included.

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

Expression of the NADP+-Dependent Formate Dehydrogenase Gene from Pseudomonas Increases the Lysine Production in Corynebacterium glutamicum

2019 ◽  
Vol 35 (6) ◽  
pp. 21-29
Author(s):  
T.E. Leonova ◽  
T.E. Shustikova ◽  
T.V. Gerasimova ◽  
Т.А. Ivankova ◽  
K.V. Sidorenko Sidorenko ◽  
...  
Keyword(s):  
Corynebacterium Glutamicum ◽  
Formate Dehydrogenase ◽  
Ministry Of Education ◽  
Lysine Production ◽  
Simultaneous Formation ◽  
Resource Center ◽  
Formate Oxidation ◽  
Gene Coding ◽  
Dehydrogenase Gene ◽  
Lysine Synthesis

Thepsefdh_D221Q gene coding for a mutant formate dehydrogenase (PseFDG_D221Q) from Pseudomonas, which catalyzes the formate oxidation with the simultaneous formation of NADPH, has been expressed in the cells of lysine-producing Corynebacterium glutamicum strains. The psefdh_D221Q gene was introduced into С. glutamicum strains as part of an autonomous plasmid or was integrated into the chromosome with simultaneous inactivation of host formate dehydrogenase genes. It was shown that the С. glutamicum strains with NADP+ -dependent formate dehydrogenase have an increased level of L-lysine synthesis in the presence of formate, if their own formate dehydrogenase is inactivated. L-lysine, formate dehydrogenase, NADPH, Corynebacterium glutamicum The work was carried out using the equipment of the Multipurpose Scientific This work was carried out on the equipment of the Multipurpose Scientific Installation of «All-Russian Collection of Industrial Microorganisms», National Bio-Resource Center, NRC «Kurchatov Institute»- GosNIIgenetika. This work was financially supported by the Ministry of Education and Science of Russia (Unique Project Identifier - RFMEFI61017X0011).

Dual-gate gallium-arsenide microwave field-effect transistor

1971 ◽  
Vol 7 (22) ◽  
pp. 661 ◽  
Author(s):  
J.A. Turner ◽  
A.J. Waller ◽  
E. Kelly ◽  
D. Parker
Keyword(s):  
Gallium Arsenide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Field ◽  
Dual Gate ◽  
Effect Transistor

Robust n/sup +//p/sup +/ dual-gate cmos device fabrication using dopant drive-out technique

2005 ◽  
Author(s):  
D.C.H. Yu ◽  
K.H. Lee ◽  
A. Kornblit ◽  
C.C. Fu ◽  
R.H. Yan ◽  
...  
Keyword(s):  
Device Fabrication ◽  
Dual Gate

scholarly journals Broad scope gold(i)-catalysed polyenyne cyclisations for the formation of up to four carbon–carbon bonds

2017 ◽  
Vol 15 (10) ◽  
pp. 2163-2167 ◽  
Author(s):  
Zhouting Rong ◽  
Antonio M. Echavarren
Keyword(s):  
Single Step ◽  
Simultaneous Formation ◽  
Broad Scope ◽  
Carbon Carbon Bonds ◽  
Carbon Bonds ◽  
First Time ◽  
High Stereoselectivity

The polycyclisation of polyeneynes catalyzed by gold(i) has been extended for the first time to the simultaneous formation of up to four carbon–carbon bonds, leading to steroid-like molecules with high stereoselectivity in a single step with low catalyst loadings.

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