Monte Carlo study of 50 nm-long single and dual-gate MODFETs: 
suppression of short-channel effects

P. Dollfus; P. Hesto; S. Galdin; C. Brisset

doi:10.1051/jp3:1993232

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

Journal de Physique III ◽

10.1051/jp3:1993232 ◽

1993 ◽

Vol 3 (9) ◽

pp. 1719-1728

Author(s):

P. Dollfus ◽

P. Hesto ◽

S. Galdin ◽

C. Brisset

Keyword(s):

Monte Carlo ◽

Monte Carlo Study ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Dual Gate

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Monte Carlo study of a 50 nm-dual-gate HEMT providing against short-channel effects

Solid-State Electronics ◽

10.1016/0038-1101(93)90239-m ◽

1993 ◽

Vol 36 (5) ◽

pp. 711-715 ◽

Cited By ~ 12

Author(s):

P. Dollfus ◽

P. Hesto

Keyword(s):

Monte Carlo ◽

Monte Carlo Study ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Dual Gate

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Scaling properties and short-channel effects in submicrometer AlGaAs/GaAs MODFET's: A Monte Carlo study

IEEE Transactions on Electron Devices ◽

10.1109/16.182496 ◽

1993 ◽

Vol 40 (2) ◽

pp. 234-249 ◽

Cited By ~ 40

Author(s):

I.C. Kizilyalli ◽

M. Artaki ◽

N.J. Shah ◽

A. Chandra

Keyword(s):

Monte Carlo ◽

Monte Carlo Study ◽

Short Channel Effects ◽

Short Channel ◽

Scaling Properties ◽

Channel Effects

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Monte Carlo study of a self-aligned dual 50nm-gate InAlAs/InGaAs HEMT exhibiting high performances without short-channel effects

1993 (5th) International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1993.380582 ◽

2002 ◽

Cited By ~ 1

Author(s):

P. Dollfus ◽

C. Brisset ◽

S. Galdin ◽

P. Hesto

Keyword(s):

Monte Carlo ◽

Monte Carlo Study ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Cellular Monte Carlo study of RF short-channel effects, effective gate length, and aspect ratio in GaN and InGaAs HEMTs

2010 14th International Workshop on Computational Electronics ◽

10.1109/iwce.2010.5678006 ◽

2010 ◽

Cited By ~ 3

Author(s):

Diego Guerra ◽

Richard Akis ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti ◽

...

Keyword(s):

Monte Carlo ◽

Aspect Ratio ◽

Monte Carlo Study ◽

Gate Length ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Cellular Monte Carlo

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Influence of short channel effects on microwave performances of AlGaAs/InGaAs HEMTs using Monte Carlo simulation

Microelectronic Engineering ◽

10.1016/0167-9317(92)90544-2 ◽

1992 ◽

Vol 19 (1-4) ◽

pp. 781-784 ◽

Cited By ~ 1

Author(s):

P. Dollfus ◽

C. Bru ◽

S. Galdin ◽

P. Hesto

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Short channel effects in dual gate field effect transistors

10.1109/iedm.1978.189460 ◽

1978 ◽

Cited By ~ 6

Author(s):

W.P. Noble

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Dual Gate

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Short Channel Effects suppression in a dual-gate Gate-All-Around Si nanowire junctionless nMOSFET

2016 9th International Conference on Electrical and Computer Engineering (ICECE) ◽

10.1109/icece.2016.7853976 ◽

2016 ◽

Author(s):

M W Rony ◽

Pankaj Bhowmik ◽

Harley R. Myler ◽

Provakar Mondol

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Si Nanowire ◽

Channel Effects ◽

Dual Gate

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A new transistor of dual-gate SOI and evidence for diminished short channel effects

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems ◽

10.1109/electro.2009.5441180 ◽

2009 ◽

Cited By ~ 2

Author(s):

Mohamad Kazem Anvarifard ◽

Mahdi Gordi Armaki ◽

Seyed Ebrahim Hosseini

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Dual Gate

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Reducing short channel effects in dual gate SOI-MOSFETs with a drain dependent gate bias

2010 18th Iranian Conference on Electrical Engineering ◽

10.1109/iraniancee.2010.5507042 ◽

2010 ◽

Cited By ~ 2

Author(s):

Mohsen Khani Parashkoh ◽

Seyed Ebrahim Hosseini ◽

Iman Abaspur Kazerouni

Keyword(s):

Gate Bias ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Dual Gate

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Improving Short Channel Effects by Reformed U-Channel UTBB FD SOI MOSFET: A Feasible Scaled Device

Silicon ◽

10.1007/s12633-020-00861-z ◽

2021 ◽

Author(s):

Moslem Ghassemi ◽

Ali A. Orouji

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Soi Mosfet ◽

Channel Effects

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