Kinetics of phosphorus proximity rapid thermal diffusion using spin‐on dopant source for shallow junctions fabrication

1995 ◽  
Vol 78 (1) ◽  
pp. 204-211 ◽  
Author(s):  
P. B. Grabiec ◽  
W. Zagozdzon‐Wosik ◽  
G. Lux
Keyword(s):  
Thermal Diffusion ◽  
Shallow Junctions ◽  
Rapid Thermal Diffusion ◽  
Kinetics Of ◽  
Dopant Source

Investigation of Proximity Rtd for Submicron Junctions in Vlsi Si Devices

1993 ◽  
Vol 303 ◽  
Author(s):  
W. Zagozdzon-Wosik ◽  
P. Grabiec ◽  
F. Romero-Borja ◽  
L. T. Wood ◽  
G. Lux
Keyword(s):  
Sheet Resistance ◽  
Thermal Diffusion ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Si Doping ◽  
Shallow Junctions ◽  
Rapid Thermal Diffusion ◽  
Kinetics Of ◽  
Secondary Ion

ABSTRACTProximity rapid thermal diffusion is presented as a doping process for fabrication of very shallow junctions. The kinetics of Si doping with B, P and As is investigated using sheet resistance measurements, secondary ion mass spectroscopy and FTIR analyses. The efficiency of doping is affected by the dopant transport in the SOD which depends on the structure and composition of the SOD.

Boron Doping using Proximity Rapid Thermal Diffusion from Spin-on-Dopants

1994 ◽  
Vol 342 ◽  
Author(s):  
M. Rastogi ◽  
W. Zagozdzon-Wosik ◽  
F. Romero-Borja ◽  
J. M. Heddleson ◽  
R. Beavers ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Process Variables ◽  
Dopant Incorporation ◽  
Boron Doped ◽  
Doping Technique ◽  
Rapid Thermal Diffusion ◽  
P Type ◽  
Temperature Time ◽  
Secondary Ion ◽  
Dopant Source

ABSTRACTProximity rapid thermal diffusion (RTD) has been investigated as a doping technique for p-type boron doped junctions. The efficiency of RTD has been studied as a function of process variables (temperature, time, and ambient) and evaluated based on sheet resistance measurements, secondary ion mass spectroscopy (SIMS), spreading resistance (SR), and Fourier transmission infrared absorption (FTIR) in a spin-on-dopant source (SOD). The doping efficiency in source wafers is controlled by different mechanism than in processed wafers. Strong influence of dopant incorporation in the processed wafers on oxygen content in the diffusion ambient is observed especially at low diffusion temperatures.

SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

2004 ◽  
Vol 40 (1) ◽  
pp. 83 ◽  
Author(s):  
L.-E. Wernersson ◽  
S. Kabeer ◽  
V. Zela ◽  
E. Lind ◽  
J. Zhang ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Tunnel Diodes ◽  
Cvd Growth ◽  
Rapid Thermal Diffusion

Selective emitters in Si by single step rapid thermal diffusion for photovoltaic devices

2000 ◽  
Vol 21 (6) ◽  
pp. 274-276 ◽  
Author(s):  
S. Sivoththaman ◽  
W. Laureys ◽  
P. De Schepper ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Thermal Diffusion ◽  
Single Step ◽  
Photovoltaic Devices ◽  
Rapid Thermal Diffusion ◽  
Selective Emitters

Spectroscopic Investigations of Borosilicate Glass and Its Application as a Dopant Source for Shallow Junctions

2000 ◽  
Vol 147 (8) ◽  
pp. 3100 ◽  
Author(s):  
M. Nolan ◽  
T. S. Perova ◽  
R. A. Moore ◽  
C. E. Beitia ◽  
J. F. McGilp ◽  
...  
Keyword(s):  
Borosilicate Glass ◽  
Spectroscopic Investigations ◽  
Shallow Junctions ◽  
Dopant Source

Optical effects during rapid thermal diffusion

1998 ◽  
Vol 27 (12) ◽  
pp. 1315-1322 ◽  
Author(s):  
S. Noël ◽  
L. Ventura ◽  
A. Slaoui ◽  
J. C. Muller ◽  
B. Groh ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Optical Effects ◽  
Rapid Thermal Diffusion

Rapid Thermal Diffusion of Indium in p-HgCdTe/CdTe

1996 ◽  
Vol 35 (Part 2, No. 12A) ◽  
pp. L1554-L1557 ◽  
Author(s):  
Seung-Man Park ◽  
Jae Mook Kim ◽  
Hee Chul Lee ◽  
Choong-Ki Kim
Keyword(s):  
Thermal Diffusion ◽  
Rapid Thermal Diffusion

Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon

1984 ◽  
Vol 131 (10) ◽  
pp. 2387-2394 ◽  
Author(s):  
R. B. Fair ◽  
J. J. Wortman ◽  
J. Liu
Keyword(s):  
Thermal Diffusion ◽  
Rapid Thermal Diffusion
Sign in / Sign up

Export Citation Format

Share Document