Formation of Cobalt Silicides in Arsenic Implanted Cobalt on Silicon System

1990 ◽  
Vol 181 ◽  
Author(s):  
A.R. Sitaram ◽  
S.P. Murarka
Keyword(s):  
Ion Implantation ◽  
Cobalt Disilicide ◽  
Furnace Annealing ◽  
Silicide Layer ◽  
Cobalt Films ◽  
Contact Metallization ◽  
Shallow Junctions ◽  
Silicon System ◽  
Cobalt Silicides ◽  
Dopant Source

ABSTRACTThe importance of self aligned cobalt disilicide technology for gate and interconnection, and contact metallization cannot be overemphasized. Simultaneously, the concept of forming shallow junctions by using the metal or silicide layer as a dopant source is gaining prominence. In this work, we will present and discuss the results of the effect of arsenic, implanted into cobalt films on silicon, on the Co-Si reaction. Arsenic redistribution during the reaction, both during furnace annealing and RTA, and the effect of ion implantation and dose and energy will also be included.

Formation of NiSi-Silicided p + n Shallow Junctions Using Implant Through Silicide and Low Temperature Furnace Annealing

2003 ◽  
Vol 765 ◽  
Author(s):  
Chao-Chun Wang ◽  
Chiao-Ju Lin ◽  
Mao-Chieh Chen
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Reverse Bias ◽  
Reverse Current ◽  
Furnace Annealing ◽  
Silicide Layer ◽  
Shallow Junctions ◽  
Higher Temperature ◽  
Temperature Furnace

AbstractNiSi-silicided p+n shallow junctions are fabricated using BF2+ implantation into/through thin NiSi silicide layer (ITS technology) followed by low temperature furnace annealing (from 550 to 800°C). The NiSi film agglomerates following a thermal annealing at 600°C, and may result in the formation of discontinuous islands at a higher temperature. The incorporation of fluorine atoms in the NiSi film can retard the formation of film agglomeration and thus improve the film's thermal stability. A forward ideality factor of about 1.02 and a reverse current density of about 1nA/cm2 can be attained for the NiSi(310Å)/p+n junctions fabricated by BF2+ implantation at 35 keV to a dose of 5×1015cm-2 followed by a 650°C thermal annealing; the junction formed is about 60nm measured from the NiSi/Si interface. Activation energy measurements show that the reverse bias junction currents are dominated by the diffusion current, indicating that most of the implanted damages can be recovered after annealing at a temperature as low as 650°C.

Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon

2013 ◽  
Vol 854 ◽  
pp. 141-145
Author(s):  
V.G. Litovchenko ◽  
B. Romanyuk ◽  
O. Oberemok ◽  
V. Popov ◽  
V. Melnik ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Furnace Annealing ◽  
Marker Layer ◽  
Silicon Bulk ◽  
Junction Formation ◽  
Shallow Junctions ◽  
O Isotope ◽  
Ultra Shallow Junctions ◽  
Effect Of Oxygen

Ultra-shallow junctions (USJs) were formed by low-energy As ion implantation with the subsequent furnace annealing. It was found that the significant amount of oxygen is redistributed from the silicon bulk to the arsenic-implanted region. We present the effect of oxygen gettering at the creation of arsenic-doped USJs using the marker layer created by ion implantation of 18O isotope.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters

1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laanab ◽  
C. Bergaud ◽  
M. M. Faye ◽  
J. Faure ◽  
A. Martinez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Computer Simulations ◽  
Point Defects ◽  
Numerical Optimization ◽  
Experimental Investigations ◽  
Shallow Junctions ◽  
Quantitative Explanation ◽  
Defect Densities

ABSTRACTComputer simulations in conjunction with TEM experiments have been used to test the different models usually adopted in the literature to explain the formation of “End Of Range”(EOR) defects which appear after annealing of preamorphized silicon layers. Only one survives careful experimental investigations involving Si+, Ge+, Sn+ amorphization at RT and LNT. The “excess-interstitial” model appears relevant at least for a semi-quantitative explanation of the source of point-defects which after recombination and agglomeration, lead to the formation of these defects. This model may be used for the numerical optimization of conditions for the production of high performances ullra-shallow junctions.

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing

2000 ◽  
Vol 338-342 ◽  
pp. 877-880 ◽  
Author(s):  
D. Panknin ◽  
H. Wirth ◽  
W. Anwand ◽  
Gerhard Brauer ◽  
Wolfgang Skorupa
Keyword(s):  
Ion Implantation ◽  
High Concentration ◽  
Furnace Annealing

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

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