Spectroscopic Investigations of Borosilicate Glass and Its Application as a Dopant Source for Shallow Junctions

2000 ◽  
Vol 147 (8) ◽  
pp. 3100 ◽  
Author(s):  
M. Nolan ◽  
T. S. Perova ◽  
R. A. Moore ◽  
C. E. Beitia ◽  
J. F. McGilp ◽  
...  
Keyword(s):  
Borosilicate Glass ◽  
Spectroscopic Investigations ◽  
Shallow Junctions ◽  
Dopant Source

Driving-in effect and gettering degradation induced by laser doping using borosilicate glass as dopant source

2019 ◽  
Vol 30 (7) ◽  
pp. 6895-6901
Author(s):  
Ning Yang ◽  
Shizheng Li ◽  
Xiao Yuan ◽  
Xiaojun Ye ◽  
Xuegang Sang ◽  
...  
Keyword(s):  
Borosilicate Glass ◽  
Laser Doping ◽  
Dopant Source

Formation of Cobalt Silicides in Arsenic Implanted Cobalt on Silicon System

1990 ◽  
Vol 181 ◽  
Author(s):  
A.R. Sitaram ◽  
S.P. Murarka
Keyword(s):  
Ion Implantation ◽  
Cobalt Disilicide ◽  
Furnace Annealing ◽  
Silicide Layer ◽  
Cobalt Films ◽  
Contact Metallization ◽  
Shallow Junctions ◽  
Silicon System ◽  
Cobalt Silicides ◽  
Dopant Source

ABSTRACTThe importance of self aligned cobalt disilicide technology for gate and interconnection, and contact metallization cannot be overemphasized. Simultaneously, the concept of forming shallow junctions by using the metal or silicide layer as a dopant source is gaining prominence. In this work, we will present and discuss the results of the effect of arsenic, implanted into cobalt films on silicon, on the Co-Si reaction. Arsenic redistribution during the reaction, both during furnace annealing and RTA, and the effect of ion implantation and dose and energy will also be included.

Simultaneous Formation of Shallow Junctions and Gate Doping for Dual Gate Structures Using Cobalt Silicone as a Dopant Source

1999 ◽  
Vol 146 (10) ◽  
pp. 3856-3859
Author(s):  
Ji‐Soo Park ◽  
Dong Kyum Sohn ◽  
Jong‐Uk Bae ◽  
Jin Won Park
Keyword(s):  
Simultaneous Formation ◽  
Shallow Junctions ◽  
Dual Gate ◽  
Dopant Source

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

SPECTROSCOPIC INVESTIGATIONS OF FERROCENE AND RELATED DERIVATIVES

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-463-C6-470 ◽  
Author(s):  
A. TRAUTWEIN ◽  
R. RESCHKE ◽  
I. DÉZSI ◽  
F. E. HARRIS
Keyword(s):  
Spectroscopic Investigations
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