Dual-gate gallium-arsenide microwave field-effect transistor

1971 ◽  
Vol 7 (22) ◽  
pp. 661 ◽  
Author(s):  
J.A. Turner ◽  
A.J. Waller ◽  
E. Kelly ◽  
D. Parker
Keyword(s):  
Gallium Arsenide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Field ◽  
Dual Gate ◽  
Effect Transistor

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

scholarly journals Resolving ambiguities in nanowire field-effect transistor characterization

Nanoscale ◽  
2015 ◽  
Vol 7 (43) ◽  
pp. 18188-18197 ◽  
Author(s):  
Sebastian Heedt ◽  
Isabel Otto ◽  
Kamil Sladek ◽  
Hilde Hardtdegen ◽  
Jürgen Schubert ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Evaluation Method ◽  
Surface States ◽  
Profound Impact ◽  
Nanowire Surface ◽  
Dual Gate ◽  
Effect Transistor

The profound impact of InAs nanowire surface states on transistor functionality is quantified using a novel dual-gate FET evaluation method in conjunction with finite element method simulations of nanowire electrostatics.

Sign in / Sign up

Export Citation Format

Share Document