Experimental investigation of the influence of the barrier thickness in double-quantum-well resonant interband tunnel diodes

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1013-1016 ◽  
Author(s):  
Rui Q. Yang ◽  
Jian Lu ◽  
J. M. Xu ◽  
D. J. Day
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Barrier Thickness ◽  
Double Quantum Well ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resonant Interband Tunnel Diodes ◽  
Peak To Valley Ratio

The influence of the central barrier thickness to current–voltage characteristics of double-quantum-well (DQW) resonant interband tunnel diodes are experimentally investigated at room temperature. A peak to valley ratio greater than 100:1 at room temperature is obtained in the device with a central barrier thickness of 20 Å and a well width of 40 Å. (1 Å = 10−10 m).

Well width dependence of tunneling current in double-quantum-well resonant interband tunnel diodes

1992 ◽  
Vol 13 (3) ◽  
pp. 155-157 ◽  
Author(s):  
A.G. MacDonald ◽  
L.V. Iogansen ◽  
D.J. Day ◽  
M. Sweeny ◽  
J. Xu
Keyword(s):  
Quantum Well ◽  
Tunneling Current ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Double Quantum Well ◽  
Resonant Interband Tunnel Diodes

Study of peak and valley currents in double quantum well resonant interband tunnel diodes

1992 ◽  
Vol 7 (8) ◽  
pp. 1097-1102 ◽  
Author(s):  
J M Xu ◽  
A G MacDonald ◽  
L V Iogansen ◽  
D J Day ◽  
M Sweeny
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Double Quantum Well ◽  
Resonant Interband Tunnel Diodes

Double quantum well resonant tunnel diodes

1990 ◽  
Vol 57 (12) ◽  
pp. 1260-1261 ◽  
Author(s):  
D. J. Day ◽  
Y. Chung ◽  
C. Webb ◽  
J. N. Eckstein ◽  
J. M. Xu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Double Quantum Well ◽  
Resonant Tunnel

scholarly journals Differential Gain in InGaAsN/GaAs Double Quantum Well Structures by Numerical Simulations

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
M. S. Wartak ◽  
P. Weetman ◽  
P. Rusek
Keyword(s):  
Quantum Well ◽  
Hamiltonian Matrix ◽  
Double Quantum ◽  
Barrier Thickness ◽  
Quantum Well Structures ◽  
Barrier Effects ◽  
Differential Gain ◽  
Numerical Studies ◽  
Double Quantum Well ◽  
Coupled Quantum Well

We performed numerical studies of differential gain in a coupled quantum well structures built from InGaAsN. Differential gain in In0.38Ga0.62As1_yNy/GaAs quantum well structures was determined and analyzed. A 10-band k_p Hamiltonian matrix was used in the calculations and solved self-consistently with Poisson's equation. The effect of Nitrogen composition and barrier thickness on differential gain has been determined. The influence of Nitrogen composition on differential gain is significant whereas barrier effects are modest.

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