scholarly journals Differential Gain in InGaAsN/GaAs Double Quantum Well Structures by Numerical Simulations

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
M. S. Wartak ◽  
P. Weetman ◽  
P. Rusek

We performed numerical studies of differential gain in a coupled quantum well structures built from InGaAsN. Differential gain in In0.38Ga0.62As1_yNy/GaAs quantum well structures was determined and analyzed. A 10-band k_p Hamiltonian matrix was used in the calculations and solved self-consistently with Poisson's equation. The effect of Nitrogen composition and barrier thickness on differential gain has been determined. The influence of Nitrogen composition on differential gain is significant whereas barrier effects are modest.

2008 ◽  
Vol 1101 ◽  
Author(s):  
Urs Aeberhard ◽  
Rudolf Morf

AbstractWe use our recently developed microscopic approach to a quantum theory of photovoltaic processes in nanostructures [1]to investigate geometry effects in quantum well photovoltaics, focussing on the role of asymmetry and inter-well coupling in double quantum well (DQW) systems. For that purpose, the IV and power characteristics for DQW systems with different asymmetry and degree of coupling are calculated numerically in the vicinity of the maximum power point. In order to assess the transport properties of a specific QW structure, we isolate these from the effects of absorption by normalizing to the absorptivity. The results obtained from this procedure reveal the escape regime dominating at room temperature and confirm previous experimental observations.


1993 ◽  
Vol 03 (C5) ◽  
pp. 401-404 ◽  
Author(s):  
S. J. WESTON ◽  
J. E. NICHOLLS ◽  
M. O'NEILL ◽  
T. STIRNER ◽  
P. HARRISON ◽  
...  

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