dc current‐voltage characteristics of a double‐quantum‐well field‐effect resonant tunneling transistor

1992 ◽  
Vol 60 (18) ◽  
pp. 2273-2275 ◽  
Author(s):  
J. G. Chen ◽  
C. H. Yang ◽  
R. A. Wilson ◽  
C. E. C. Wood
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Resonant Tunneling ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Current Voltage ◽  
Well Field ◽  
Current Voltage Characteristics ◽  
Dc Current

Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

2003 ◽  
Vol 94 (5) ◽  
pp. 3556-3562 ◽  
Author(s):  
V. V. Popov ◽  
O. V. Polischuk ◽  
T. V. Teperik ◽  
X. G. Peralta ◽  
S. J. Allen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Terahertz Radiation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Effect Transistor ◽  
Plasmon Modes

ERRATA: "THz DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES"

2002 ◽  
Vol 12 (03) ◽  
pp. 925-937 ◽  
Author(s):  
X. G. PERALTA ◽  
S. J. ALLEN ◽  
M. C. WANKE ◽  
N. E. HARFF ◽  
M. P. LILLY ◽  
...  
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Thz Radiation ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Field Effect Devices ◽  
Effect Transistor

We demonstrate resonant detection of terahertz radiation by two-dimensional plasma waves in two field effect devices: a commercial field effect transistor (FET) and a double quantum well field effect transistor with a periodic grating gate. In both devices, the standing 2-D plasmon is tuned to the frequency of the THz radiation by varying the gate bias. The double quantum well field effect transistors exhibits a rich photoconductive response corresponding to spatial harmonics of the standing 2-D plasmons under the metal part of the periodic gate.

Experimental investigation of the influence of the barrier thickness in double-quantum-well resonant interband tunnel diodes

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1013-1016 ◽  
Author(s):  
Rui Q. Yang ◽  
Jian Lu ◽  
J. M. Xu ◽  
D. J. Day
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Barrier Thickness ◽  
Double Quantum Well ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resonant Interband Tunnel Diodes ◽  
Peak To Valley Ratio

The influence of the central barrier thickness to current–voltage characteristics of double-quantum-well (DQW) resonant interband tunnel diodes are experimentally investigated at room temperature. A peak to valley ratio greater than 100:1 at room temperature is obtained in the device with a central barrier thickness of 20 Å and a well width of 40 Å. (1 Å = 10−10 m).

scholarly journals Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors

2002 ◽  
Vol 81 (9) ◽  
pp. 1627-1629 ◽  
Author(s):  
X. G. Peralta ◽  
S. J. Allen ◽  
M. C. Wanke ◽  
N. E. Harff ◽  
J. A. Simmons ◽  
...  
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Plasmon Modes

Tracing the interwell plasmon in a grid-gated double-quantum-well field-effect transistor

2005 ◽  
Author(s):  
Vyacheslav V. Popov ◽  
Tatiana V. Teperik ◽  
Yuriy N. Zayko ◽  
Norman J. M. Horing ◽  
Denis V. Fateev
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Effect Transistor
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