Double quantum well resonant tunnel diodes

1990 ◽  
Vol 57 (12) ◽  
pp. 1260-1261 ◽  
Author(s):  
D. J. Day ◽  
Y. Chung ◽  
C. Webb ◽  
J. N. Eckstein ◽  
J. M. Xu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Double Quantum Well ◽  
Resonant Tunnel

Well width dependence of tunneling current in double-quantum-well resonant interband tunnel diodes

1992 ◽  
Vol 13 (3) ◽  
pp. 155-157 ◽  
Author(s):  
A.G. MacDonald ◽  
L.V. Iogansen ◽  
D.J. Day ◽  
M. Sweeny ◽  
J. Xu
Keyword(s):  
Quantum Well ◽  
Tunneling Current ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Double Quantum Well ◽  
Resonant Interband Tunnel Diodes

Study of peak and valley currents in double quantum well resonant interband tunnel diodes

1992 ◽  
Vol 7 (8) ◽  
pp. 1097-1102 ◽  
Author(s):  
J M Xu ◽  
A G MacDonald ◽  
L V Iogansen ◽  
D J Day ◽  
M Sweeny
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Double Quantum Well ◽  
Resonant Interband Tunnel Diodes

Experimental investigation of the influence of the barrier thickness in double-quantum-well resonant interband tunnel diodes

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1013-1016 ◽  
Author(s):  
Rui Q. Yang ◽  
Jian Lu ◽  
J. M. Xu ◽  
D. J. Day
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Barrier Thickness ◽  
Double Quantum Well ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resonant Interband Tunnel Diodes ◽  
Peak To Valley Ratio

The influence of the central barrier thickness to current–voltage characteristics of double-quantum-well (DQW) resonant interband tunnel diodes are experimentally investigated at room temperature. A peak to valley ratio greater than 100:1 at room temperature is obtained in the device with a central barrier thickness of 20 Å and a well width of 40 Å. (1 Å = 10−10 m).

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