P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature

1994 ◽  
Vol 15 (9) ◽  
pp. 357-359 ◽  
Author(s):  
H.H. Tsai ◽  
Y.K. Su ◽  
H.H. Lin ◽  
R.L. Wang ◽  
T.L. Lee
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Double Quantum ◽  
Current Ratio ◽  
Tunneling Diode ◽  
Double Quantum Well ◽  
Interband Tunneling

Experimental investigation of the influence of the barrier thickness in double-quantum-well resonant interband tunnel diodes

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1013-1016 ◽  
Author(s):  
Rui Q. Yang ◽  
Jian Lu ◽  
J. M. Xu ◽  
D. J. Day
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Barrier Thickness ◽  
Double Quantum Well ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resonant Interband Tunnel Diodes ◽  
Peak To Valley Ratio

The influence of the central barrier thickness to current–voltage characteristics of double-quantum-well (DQW) resonant interband tunnel diodes are experimentally investigated at room temperature. A peak to valley ratio greater than 100:1 at room temperature is obtained in the device with a central barrier thickness of 20 Å and a well width of 40 Å. (1 Å = 10−10 m).

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