Well width dependence of tunneling current in double-quantum-well resonant interband tunnel diodes

A.G. MacDonald; L.V. Iogansen; D.J. Day; M. Sweeny; J. Xu

doi:10.1109/55.144995

Well width dependence of tunneling current in double-quantum-well resonant interband tunnel diodes

IEEE Electron Device Letters ◽

10.1109/55.144995 ◽

1992 ◽

Vol 13 (3) ◽

pp. 155-157 ◽

Cited By ~ 11

Author(s):

A.G. MacDonald ◽

L.V. Iogansen ◽

D.J. Day ◽

M. Sweeny ◽

J. Xu

Keyword(s):

Quantum Well ◽

Tunneling Current ◽

Double Quantum ◽

Tunnel Diodes ◽

Double Quantum Well ◽

Resonant Interband Tunnel Diodes

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Study of peak and valley currents in double quantum well resonant interband tunnel diodes

Semiconductor Science and Technology ◽

10.1088/0268-1242/7/8/012 ◽

1992 ◽

Vol 7 (8) ◽

pp. 1097-1102 ◽

Cited By ~ 10

Author(s):

J M Xu ◽

A G MacDonald ◽

L V Iogansen ◽

D J Day ◽

M Sweeny

Keyword(s):

Quantum Well ◽

Double Quantum ◽

Tunnel Diodes ◽

Double Quantum Well ◽

Resonant Interband Tunnel Diodes

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Experimental investigation of the influence of the barrier thickness in double-quantum-well resonant interband tunnel diodes

Canadian Journal of Physics ◽

10.1139/p92-162 ◽

1992 ◽

Vol 70 (10-11) ◽

pp. 1013-1016 ◽

Cited By ~ 5

Author(s):

Rui Q. Yang ◽

Jian Lu ◽

J. M. Xu ◽

D. J. Day

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Double Quantum ◽

Tunnel Diodes ◽

Barrier Thickness ◽

Double Quantum Well ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Resonant Interband Tunnel Diodes ◽

Peak To Valley Ratio

The influence of the central barrier thickness to current–voltage characteristics of double-quantum-well (DQW) resonant interband tunnel diodes are experimentally investigated at room temperature. A peak to valley ratio greater than 100:1 at room temperature is obtained in the device with a central barrier thickness of 20 Å and a well width of 40 Å. (1 Å = 10−10 m).

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Double quantum well resonant tunnel diodes

Applied Physics Letters ◽

10.1063/1.103503 ◽

1990 ◽

Vol 57 (12) ◽

pp. 1260-1261 ◽

Cited By ~ 29

Author(s):

D. J. Day ◽

Y. Chung ◽

C. Webb ◽

J. N. Eckstein ◽

J. M. Xu ◽

...

Keyword(s):

Quantum Well ◽

Double Quantum ◽

Tunnel Diodes ◽

Double Quantum Well ◽

Resonant Tunnel

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Effect of structural parameters on tunneling current density for rectangular double quantum well device

Computational Science and Engineering ◽

10.1201/9781315375021-50 ◽

2016 ◽

pp. 251-256

Author(s):

Shuvodeep Saha ◽

Aparupa Chakrabarty ◽

Arpan Deyasi

Keyword(s):

Quantum Well ◽

Current Density ◽

Structural Parameters ◽

Tunneling Current ◽

Double Quantum ◽

Double Quantum Well

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Terahertz-field-induced tunneling current with nonlinear effects in a double quantum well coupled to a continuum

Journal of Applied Physics ◽

10.1063/1.3270263 ◽

2009 ◽

Vol 106 (12) ◽

pp. 123703 ◽

Cited By ~ 3

Author(s):

Marcelo Z. Maialle ◽

Marcos H. Degani ◽

Justino R. Madureira ◽

Paulo F. Farinas

Keyword(s):

Quantum Well ◽

Tunneling Current ◽

Nonlinear Effects ◽

Double Quantum ◽

Double Quantum Well

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Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/aba379 ◽

2020 ◽

Vol 59 (8) ◽

pp. 080903

Author(s):

Ayaka Shinkawa ◽

Minoru Wakiya ◽

Yuki Maeda ◽

Takahiro Tsukamoto ◽

Nobumitsu Hirose ◽

...

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Thermionic Emission ◽

Resonant Tunneling Diode ◽

Double Quantum ◽

High Resonance ◽

Tunneling Diode ◽

Double Quantum Well ◽

Resonance Current

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Optical absorption in the terahertz region in HgTe/HgCd(Mn)Te double quantum well structures with a topological phase and structural inversion asymmetry

Surface Science ◽

10.1016/j.susc.2020.121780 ◽

2021 ◽

Vol 706 ◽

pp. 121780

Author(s):

M. Marchewka ◽

P. Śliż

Keyword(s):

Optical Absorption ◽

Quantum Well ◽

Double Quantum ◽

Topological Phase ◽

Quantum Well Structures ◽

Terahertz Region ◽

Double Quantum Well ◽

Structural Inversion ◽

Inversion Asymmetry

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si

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Characteristics of a Dilute Nitride InGaAsN Double Quantum Well Laser at 1047 nm

2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging (SIITME) ◽

10.1109/siitme50350.2020.9292223 ◽

2020 ◽

Author(s):

Andrei Dragulinescu ◽

Mihail Dumitrescu

Keyword(s):

Quantum Well ◽

Double Quantum ◽

Dilute Nitride ◽

Quantum Well Laser ◽

Double Quantum Well

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Transport hysteresis in AlGaAs/GaAs double quantum well systems with InAs quantum dots

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/19/50/506207 ◽

2007 ◽

Vol 19 (50) ◽

pp. 506207 ◽

Cited By ~ 2

Author(s):

E S Kannan ◽

Gil-Ho Kim ◽

I Farrer ◽

D A Ritchie

Keyword(s):

Quantum Dots ◽

Quantum Well ◽

Double Quantum ◽

Inas Quantum Dots ◽

Double Quantum Well

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