Rapid densification of borophosphosilicate glass

1989 ◽  
Vol 67 (4) ◽  
pp. 174-178 ◽  
Author(s):  
Lynnette D. Madsen ◽  
Jacques S. Mercier
Keyword(s):  
Flow Behavior ◽  
Chemical Vapor ◽  
Peak Height ◽  
Densification Temperature ◽  
Device Processing ◽  
Pressure Chemical ◽  
Rapid Thermal Annealer ◽  
Wet Etch ◽  
The Impact ◽  
Borophosphosilicate Glass

The effect of densification, using a rapid thermal annealer, on properties of low pressure chemical vapor deposited borophosphosilicate glass films (4 wt.% B, 4 wt.% P) has been investigated. After densification, the wet etch rate of the films decreased by a factor of 12, while the infrared Si–O band peak height increased by 10%. Application of these findings to process monitoring and the impact of densification on subsequent processing have been examined. Results show that a single densification cycle at 950 °C/20 s induces glass flow behavior. Furthermore, for densification cycles from 500 to 1000 °C for 20 s followed by a fusion cycle of 1100 °C/20 s, densification temperature has no effect on the smoothing of glass over step structures. However, for contact sidewalls a densification cycle of at least 700 °C/20 s is required for sufficient tapering of the sharp corner. An optimal densification cycle for device processing was determined to be 800 °C/20 s.

Impact of In Situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

2022 ◽  
Author(s):  
Ding-Yuan Chen ◽  
Axel R Persson ◽  
Kai Hsin Wen ◽  
Daniel Sommer ◽  
Jan Gruenenpuett ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Untreated Sample ◽  
Pressure Chemical ◽  
Gan Hemts ◽  
Pre Treatment ◽  
The Impact

Abstract The impact on the performance of GaN HEMTs of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 minutes) were compared in terms of interface properties and device performance. A reduction of oxygen at the interface between SiN and epi-structure is detected by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy measurements in the sample subjected to 10 minutes of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9 % (compared to 16% for the untreated sample), which is attributed to the reduction of oxygen at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 minutes significantly improves the current dispersion uniformity from 14.5 % to 1.9 %. The reduced trapping effects result in a high output power of 3.4 W/mm at 3 GHz (compared to 2.6 W/mm for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before low-pressure chemical vapor deposition of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

Variation de la contrainte des verres de silice sous cycle thermique

1992 ◽  
Vol 70 (10-11) ◽  
pp. 830-833
Author(s):  
H. Bouchard ◽  
A. Azelmad ◽  
J. F. Currie ◽  
M. Meunier
Keyword(s):  
Initial Stress ◽  
Vapor Deposition ◽  
Boron Content ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Pressure Chemical ◽  
Phosphosilicate Glass ◽  
Borophosphosilicate Glass

Using an in situ technique, stress was measured as a function of annealing temperature to investigate the effect of phosphorous and boron doping of silicon dioxide glass films deposited by low-pressure chemical vapor deposition (LPCVD). It was found that the initial stress of phosphosilicate glass is independent of the amount of phosphorus present, while the boron content influences the initial stress in borophosphosilicate glass. The stress increases to a maximum, σm, corresponding to a temperature Tm, above which the onset of viscous flow reduces the stress to zero at a temperature T0. All these parameters are dependant on dopant concentrations. The observed mechanical behavior is discussed in terms of film viscosity.

Effect of Ambient Atmosphere on Thin Film Reaction of Si3N4 with Ti

1989 ◽  
Vol 170 ◽  
Author(s):  
Seshu B. Desu ◽  
J. Ashley Taylor
Keyword(s):  
Layer Structure ◽  
Chemical Vapor ◽  
Product Formation ◽  
Ambient Atmosphere ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Rapid Thermal Annealer ◽  
The Stability ◽  
Increasing Temperature

AbstractThe reaction of sputtered deposited Ti films of 100 nm thick with low pressure chemical vapor deposited Si3N4 films (300 nm thick) was studied in N2 or Ar, in a rapid thermal annealer. Reactions are followed using x-ray diffraction, Auger electron spectroscopy, and transmission electron microscopy. In argon, the Si3N4 and Ti reaction at low temperatures led to the product formation of two layer structure (TiN/Ti5Si3), with some contaminant oxygen and nitrogen released from the reaction uniformly dissolved throughout the remaining unreacted Ti. At higher temperatures, a three layer structure, TiN/TixSiy/TiN, on unreacted Si3N4 was developed. With increasing temperature the value of x and y decreased from 5 to 0 and 3 to 1, respectively. Reactions in N2 ambient, irrespective of temperature, always produced the three layer structure, but the thickness of TixSiy layer was much smaller than that produced in argon ambient for the corresponding temperatures. The reaction mechanism can be explained in terms of relative diffusion coefficients and the stability of the interfaces.

Mechanical stress of the electrical performance of polycrystalline-silicon resistors

2001 ◽  
Vol 16 (9) ◽  
pp. 2579-2582 ◽  
Author(s):  
N. Nakabayashi ◽  
H. Ohyama ◽  
E. Simoen ◽  
M. Ikegami ◽  
C. Claeys ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
External Stress ◽  
Electrical Performance ◽  
Structural Differences ◽  
Pressure Chemical ◽  
Si Films ◽  
The Impact

Results are presented of a study on the mechanical stress dependence of the resistance of polycrystalline silicon (Poly-Si) films doped with different atomic species. Two types of Poly-Si film implanted with boron and phosphorus ions were studied, namely, B-doped films of 400 nm and P-doped films of 250 nm thickness, which were deposited by low-pressure chemical vapor deposition at 620 °C on thermally oxidized silicon wafers. The film doping was done by ion implantation at 50 keV, with a dose of boron and phosphorus of 2 × 1014 and 5.3 × 1014 cm−2, respectively. The Poly-Si films were annealed in a N2 ambient at 1000 °C for 20 min to activate the implanted atoms. A controlled amount of external stress was applied to the silicon wafers to study the impact on the electrical performance of the implanted Poly-Si resistors. The resistance of the B-doped Poly-Si films is shown to increase by the mechanical stress, while the resistance of the P-implanted Poly-Si films remained unchanged. It is concluded that this difference is related to the structural differences between Poly-Si films implanted with boron and phosphorus, respectively.

Borophosphosilicate Glass(BPSG) Fusion Using Rapid Thermal Annealing and Steam Reflow: Physical Properties and Device Implications

1994 ◽  
Vol 342 ◽  
Author(s):  
Mike Maxim ◽  
Mansour Moinpour ◽  
John Chu ◽  
Hien Nguyen ◽  
Phil Freiberger ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Reflow Process ◽  
Film Properties ◽  
Flow Angle ◽  
Surface Stability ◽  
High Temperature Processing ◽  
As Stress ◽  
The Impact ◽  
Borophosphosilicate Glass ◽  
Processing Steps

ABSTRACTWith decreasing device geometry to below sub micron dimensions, there is a greater emphasis on reducing the thermal budget by shortening and/or eliminating high temperature processing steps. The use of RTP for borophosphosilicate glass (BPSG) fusion/reflow process, which is conventionally performed in diffusion furnaces in temperature range of 850-900 °C, has gained some acceptance in recent years. BPSG films were prepared by an atmosphericpressure chemical vapor deposition(APCVD) process. BPSG film properties such as stress, shrinkage, dopant uniformity and surface stability, step coverage, and flow angle, have been examined as a function of densification/reflow cycle. We used RTP-only, furnace-only, and RTP/furnace reflow annealing cycles. The impact of various BPSG fusion scenarios on underlying Ti salicide and P-channel and N-channel devices is discussed.

Enhancing Visible Light Photocatalysis with Hydrogenated Titanium Dioxide for Anti-Fouling Applications

MRS Advances ◽  
2018 ◽  
Vol 3 (53) ◽  
pp. 3181-3187 ◽  
Author(s):  
Safa Al Zaim ◽  
Aikifa Raza ◽  
Jin You Lu ◽  
Daniel Choi ◽  
Nicholas X. Fang ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Light Absorption ◽  
Titanium Substrate ◽  
Chemical Vapor ◽  
Ultra Violet ◽  
Visible Range ◽  
Hydrogen Dissociation ◽  
Pressure Chemical ◽  
The Impact ◽  
Titanium Substrates

ABSTRACTAnti-organic fouling performance of titanium dioxide (TiO2) can be enhanced by extending its light absorption and photocatalytic capability from ultra-violet to the visible range through hydrogenation. In this work, we aim at studying the impact of hydrogenation on the performance of both electron beam-deposited TiO2 thin films and hydrothermally grown TiO2 nanostructures on titanium substrates. Hydrogenation of these TiO2-deposited titanium substrates (TiO2/Ti) are achieved in relatively low-temperature low-pressure chemical vapor deposition chamber without any noble diatomic hydrogen dissociation catalyst, such as platinum. Our study shows that these hydrogenated TiO2/Ti have better light absorption ability and the titanium substrate itself serves as the active catalyst for hydrogen dissociation and diffusion. By applying hydrogenation to the TiO2 nanostructures, we can enhance photocatalytic performance by 50% through methylene blue degradation experiments. We have also evaluated the effect of hydrogenation on carrier density and mobility in TiO2/Ti. We recommend the hydrogenation of hydrothermally grown TiO2 nanostructure on titanium substrates for scalable photocatalytic applications.

Impact of the Inhomogenous Structure of Polysilicon TFT's Active Layer on the Electrostatic Potential Distribution

2013 ◽  
Vol 685 ◽  
pp. 352-356
Author(s):  
Hadjira Tayoub ◽  
Asmaa Bensmain ◽  
Baya Zebentout ◽  
Zineb Benamara
Keyword(s):  
Active Layer ◽  
Electrostatic Potential ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Transfer Characteristics ◽  
Vapor Deposition Technique ◽  
Pressure Chemical ◽  
The Impact ◽  
Polycrystalline Silicon Film

Recently polycrystalline silicon (pc-Si) thin film transistors (TFT’s) have emerged as the devices of choice for many applications. The TFTs made of a thin un-doped polycrystalline silicon film deposited on a glass substrate by the Low Pressure Chemical Vapor Deposition technique LPCVD have limits in the technological process to the temperature < 600°C. The benefit of pc-Si is to make devices with large grain size. Unfortunately, according to the conditions during deposition, the pc-Si layers can consist of a random superposition of grains of different sizes, where grains boundaries parallels and perpendiculars appear. In this paper, the transfer characteristics IDS-VGS are simulated by solving a set of two-dimensional (2D) drift-diffusion equations together with the usual density of states (DOS: exponential band tails and Gaussian distribution of dangling bonds) localized at the grains boundaries. The impact of thickness of the active layer on the distribution of the electrostatic potential and the effect of density of intergranular traps states on the TFT’s transfer characteristics IDS-VGS have been also investigated.

The Mechanical Properties of Common Interlevel Dielectric Films and Their Influences on Aluminum Interconnect Extrusions

1999 ◽  
Vol 594 ◽  
Author(s):  
Fen Chen ◽  
Baozhen Li ◽  
Timothy D. Sullivan ◽  
Clara L. Gonzalez ◽  
Christopher D. Muzzy ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silica Glass ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Critical Dimensions ◽  
Interconnect Reliability ◽  
The Impact ◽  
Borophosphosilicate Glass

AbstractKnowledge of the mechanical properties of interlevel dielectric films and their impact on sub-micron interconnect reliability is becoming more and more important as critical dimensions in ULSI circuits are scaled down. For example, lateral aluminum (Al) extrusions into spaces between metal lines, which become a more of a concern as the pitches shrink, appear to depend partially on properties of SiO2 underlayers. In this paper, the mechanical properties of several common interlevel dielectric SiO2 films such as undoped silica glass using a silane (SiH4) precursor, undoped silica glass using a tetraethylorthosilicate (TEOS) precursor, phosphosilicate glass (PSG) deposited by plasma-enhanced chemical vapor deposition (PECVD) and borophosphosilicate glass (BPSG) deposited by sub-atmosphere chemical vapor deposition (SACVD) were studied. Among the four common interlevel layers, BPSG exhibits the smallest modulus (E), hardness (H) and the highest the coefficients of thermal expansion (CTE). BPSG again has the lowest as-deposited compressive stress and the lowest local Si-O-Si strain before annealing. Stress interactions between the various SiO2 underlayers and the Al metal film are further investigated. The impact of dielectric elastic properties on interconnect reliability during thermal cycles is proposed.

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