Borophosphosilicate Glass(BPSG) Fusion Using Rapid Thermal Annealing and Steam Reflow: Physical Properties and Device Implications

1994 ◽  
Vol 342 ◽  
Author(s):  
Mike Maxim ◽  
Mansour Moinpour ◽  
John Chu ◽  
Hien Nguyen ◽  
Phil Freiberger ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Reflow Process ◽  
Film Properties ◽  
Flow Angle ◽  
Surface Stability ◽  
High Temperature Processing ◽  
As Stress ◽  
The Impact ◽  
Borophosphosilicate Glass ◽  
Processing Steps

ABSTRACTWith decreasing device geometry to below sub micron dimensions, there is a greater emphasis on reducing the thermal budget by shortening and/or eliminating high temperature processing steps. The use of RTP for borophosphosilicate glass (BPSG) fusion/reflow process, which is conventionally performed in diffusion furnaces in temperature range of 850-900 °C, has gained some acceptance in recent years. BPSG films were prepared by an atmosphericpressure chemical vapor deposition(APCVD) process. BPSG film properties such as stress, shrinkage, dopant uniformity and surface stability, step coverage, and flow angle, have been examined as a function of densification/reflow cycle. We used RTP-only, furnace-only, and RTP/furnace reflow annealing cycles. The impact of various BPSG fusion scenarios on underlying Ti salicide and P-channel and N-channel devices is discussed.

Rapid densification of borophosphosilicate glass

1989 ◽  
Vol 67 (4) ◽  
pp. 174-178 ◽  
Author(s):  
Lynnette D. Madsen ◽  
Jacques S. Mercier
Keyword(s):  
Flow Behavior ◽  
Chemical Vapor ◽  
Peak Height ◽  
Densification Temperature ◽  
Device Processing ◽  
Pressure Chemical ◽  
Rapid Thermal Annealer ◽  
Wet Etch ◽  
The Impact ◽  
Borophosphosilicate Glass

The effect of densification, using a rapid thermal annealer, on properties of low pressure chemical vapor deposited borophosphosilicate glass films (4 wt.% B, 4 wt.% P) has been investigated. After densification, the wet etch rate of the films decreased by a factor of 12, while the infrared Si–O band peak height increased by 10%. Application of these findings to process monitoring and the impact of densification on subsequent processing have been examined. Results show that a single densification cycle at 950 °C/20 s induces glass flow behavior. Furthermore, for densification cycles from 500 to 1000 °C for 20 s followed by a fusion cycle of 1100 °C/20 s, densification temperature has no effect on the smoothing of glass over step structures. However, for contact sidewalls a densification cycle of at least 700 °C/20 s is required for sufficient tapering of the sharp corner. An optimal densification cycle for device processing was determined to be 800 °C/20 s.

The Mechanical Properties of Common Interlevel Dielectric Films and Their Influences on Aluminum Interconnect Extrusions

1999 ◽  
Vol 594 ◽  
Author(s):  
Fen Chen ◽  
Baozhen Li ◽  
Timothy D. Sullivan ◽  
Clara L. Gonzalez ◽  
Christopher D. Muzzy ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silica Glass ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Critical Dimensions ◽  
Interconnect Reliability ◽  
The Impact ◽  
Borophosphosilicate Glass

AbstractKnowledge of the mechanical properties of interlevel dielectric films and their impact on sub-micron interconnect reliability is becoming more and more important as critical dimensions in ULSI circuits are scaled down. For example, lateral aluminum (Al) extrusions into spaces between metal lines, which become a more of a concern as the pitches shrink, appear to depend partially on properties of SiO2 underlayers. In this paper, the mechanical properties of several common interlevel dielectric SiO2 films such as undoped silica glass using a silane (SiH4) precursor, undoped silica glass using a tetraethylorthosilicate (TEOS) precursor, phosphosilicate glass (PSG) deposited by plasma-enhanced chemical vapor deposition (PECVD) and borophosphosilicate glass (BPSG) deposited by sub-atmosphere chemical vapor deposition (SACVD) were studied. Among the four common interlevel layers, BPSG exhibits the smallest modulus (E), hardness (H) and the highest the coefficients of thermal expansion (CTE). BPSG again has the lowest as-deposited compressive stress and the lowest local Si-O-Si strain before annealing. Stress interactions between the various SiO2 underlayers and the Al metal film are further investigated. The impact of dielectric elastic properties on interconnect reliability during thermal cycles is proposed.

Properties of Zr-Substituted (Ba,Sr)TiO3 Thin Films for Integrated Capacitors

1999 ◽  
Vol 603 ◽  
Author(s):  
G. T. Stauf ◽  
P. S. Chen ◽  
W. Paw ◽  
J. F. Roeder ◽  
T. Ayguavives ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Bst Thin Films ◽  
Density Values ◽  
Bst Films ◽  
The Impact

AbstractThere has been significant interest recently in use of BaSrTiO3 (BST) thin films for integrated capacitors; these devices have benefits for high frequency operations, particularly when high levels of charge or energy storage are required. We discuss the electrical properties of BST thin films grown by metalorganic chemical vapor deposition (MOCVD) which make them suitable for these applications, as well as the impact of processing conditions such as growth temperature on specific film properties. We have also examined addition of Zr in amounts ranging up to 20% to the BST films. X-Ray diffraction indicates that the Zr is incorporated into the BST lattice. Voltage withstanding capability, leakage and dielectric constant of the thin films have been measured as functions of deposition temperature and Zr content. Addition of Zr to BST films increases breakdown voltages by as much as a factor of two, to approximately 2 MV/cm, raising their energy storage density values to levels approaching 30 J/cc. Charge storage densities of above 60 fF/µm2were also obtained.

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

Toward the High-Quality Graphene for Optoelectronic Applications by Optimization of the Growth and Transfer Parameters

2013 ◽  
Vol 834-836 ◽  
pp. 33-36
Author(s):  
Lang Wang ◽  
Jian Hua Zhang ◽  
Lian Qiao Yang
Keyword(s):  
Surface Condition ◽  
Chemical Vapor ◽  
Reflow Process ◽  
High Quality ◽  
Cu Substrate ◽  
Nucleation Sites ◽  
Higher Temperature ◽  
Transfer Parameters ◽  
Optoelectronic Applications ◽  
Pre Treatment

In this paper, the process parameters of graphene during fabrication and transfer are investigated. Cu is utilized as the substrate and chemical vapor deposition are used to obtain graphene. The results show that, the surface condition of the Cu substrate tends to be worse than as-received after a relatively higher temperature (1035°C) annealing and growth process, which lead to bad graphene quality. In addition, pre-treatment of Cu substrate by acetic acid is helpful to reduce the nucleation sites. Reflow process before PMMA etching is an effective method to eliminate the wrinkles formed during transfer. High-quality graphene for optoelectronic applications were obtained based on the optimized fabrication and transfer process.

scholarly journals Crianças com incontinência urinária: impacto na convivência dos familiares

2018 ◽  
Vol 12 (7) ◽  
pp. 2061
Author(s):  
Ivanda Araújo Matias Issa de Oliveira ◽  
Cristiane Feitosa Salviano ◽  
Gisele Martins
Keyword(s):  
Urinary Incontinence ◽  
Family Members ◽  
Health Science ◽  
Related Family ◽  
Calidad De Vida ◽  
Family Routine ◽  
As Stress ◽  
The Impact

RESUMOObjetivo: Identificar fatores que impactam na convivência dos familiares de crianças com incontinência urinária. Método: Estudo bibliográfico, descritivo, tipo revisão integrativa, com busca de artigos no mês de setembro de 2017, nas bases de dados LILACS, BDENF, MEDLINE e CINAHL. Considerou-se o recorte temporal de janeiro de 2012 a dezembro de 2017, utilizando os Descritores em Ciência da Saúde (DeCS) controlados e não controlados no idioma inglês e português. Resultados: Foram incluídos 11 artigos, publicados entre 2012 e 2016, destacando-se três categorias: 1) O nível educacional dos pais como um fator de impacto; 2) O impacto na qualidade de vida dos familiares; e 3) As mudanças que impactam no cotidiano familiar. Conclusões: A incontinência urinária afeta a rotina familiar e pode provocar transtornos psicológicos como estresse, ansiedade e depressão nas crianças e em seus familiares. Houve escassez de produções que relacionassem a percepção do familiar ante a incontinência urinária diurna e fecal com o nível escolar dos pais. Evidencia-se o papel do enfermeiro que atua em uropediatria sobre a importância da compreensão da convivência familiar, a fim de contribuir com o delinear de orientações voltadas para a educação e compreensão das experiências vividas pelos cuidadores. Descritores: Incontinência Urinária; Família; Cuidadores; Crianças; Enurese; Incontinência Urinária por Estresse.ABSTRACTObjective: To identify factors that have an impact on the coexistence of family members of children with urinary incontinence. Method: Bibliographic, descriptive, integrative review type study with search of articles in September 2017, in LILACS, BDENF, MEDLIN, and CINAHL databases. We considered the temporal cut from January 2012 to December 2017, using controlled and uncontrolled Health Science Descriptors (DeCS) in English and Portuguese. Results: We included 11 articles, published between 2012 and 2016, highlighting three categories: 1) The educational level of parents as an impact factor; 2) The impact on the quality of life of family members; and 3) The changes that impact on daily family life. Conclusions: Urinary incontinence affects the family routine and can cause psychological disorders, such as stress, anxiety, and depression in children and their family members. There was a shortage of productions that related family members' perceptions of diurnal urinary incontinence and fecal incontinence to the parents' education level. The role of nurses working in pediatric urology was evident with respect to the importance of understanding family coexistence in order to contribute to the delineation of guidelines aimed at the education and understanding of caregivers' experiences. Descriptors: Urinary Incontinence; Family; Caregivers; Children; Enuresis; Urinary Incontinence Due to Stress.RESUMENObjetivo: Identificar factores que impactan en la convivencia de los familiares de niños con incontinencia urinaria. Método: Estudio bibliográfico, descriptivo, tipo revisión integradora, con búsqueda de artículos en el mes de septiembre de 2017, en las bases de datos LILACS, BDENF, MEDLINE y CINAHL. Fue considerado el recorte temporal de enero de 2012 a diciembre de 2017, utilizando los Descriptores en Ciencias de la Salud (DeCS) controlados y no controlados en idioma Inglés y portugués. Resultados: Se incluyeron 11 artículos publicados entre 2012 y 2016, destacándose tres categorías: 1) El nivel educativo de los padres como un factor de impacto; 2) El impacto en la calidad de vida de los familiares; y 3) Los cambios que impactan en el cotidiano familiar. Conclusiones: La incontinencia urinaria afecta la rutina familiar y puede provocar trastornos psicológicos como estrés, ansiedad y depresión en los niños y en sus familiares. Hubo escasez de producciones que relacionaran la percepción de los familiares ante la incontinencia urinaria diurna e incontinencia fecal con el nivel escolar de los padres. Se evidencia el papel del enfermero que actúa en urología pediátrica con respecto a la importancia de la comprensión de la convivencia familiar, a fin de contribuir con el delinear de orientaciones sobre la educación y comprensión de las experiencias vividas por los cuidadores. Descriptores: Incontinencia Urinaria; Familia; Cuidadores; Niños; Enuresis; Incontinencia Urinaria por Estrés.

CW Backside Laser Gettering

1983 ◽  
Vol 23 ◽  
Author(s):  
Gilbert Hawkins ◽  
George Erikson
Keyword(s):  
Mechanical Damage ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Defect Structures ◽  
Processing Conditions ◽  
Strain Fields ◽  
Cw Laser ◽  
High Temperature Processing ◽  
Wafer Processing ◽  
Processing Steps

ABSTRACTA variety of backside damage techniques are available for gettering heavy-metal contaminants in silicon wafers. These include mechanical damage, ion implantation, thin film deposition, and pulsed–laser surface melting. In each case, strain fields and microscopic defects induced by the processing trap impurities as they diffuse through the wafer during subsequent high–temperature processing steps. We examine the defect structures produced by CW laser gettering, describe the dependence of gettering efficiency on wafer oxygen content and processing conditions, and demonstrate that CW laser processing can be an effective gettering technique even when the number of laser scan lines is reduced to make wafer processing acceptably rapid.

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