The Mechanical Properties of Common Interlevel Dielectric Films and Their Influences on Aluminum Interconnect Extrusions

1999 ◽  
Vol 594 ◽  
Author(s):  
Fen Chen ◽  
Baozhen Li ◽  
Timothy D. Sullivan ◽  
Clara L. Gonzalez ◽  
Christopher D. Muzzy ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silica Glass ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Critical Dimensions ◽  
Interconnect Reliability ◽  
The Impact ◽  
Borophosphosilicate Glass

AbstractKnowledge of the mechanical properties of interlevel dielectric films and their impact on sub-micron interconnect reliability is becoming more and more important as critical dimensions in ULSI circuits are scaled down. For example, lateral aluminum (Al) extrusions into spaces between metal lines, which become a more of a concern as the pitches shrink, appear to depend partially on properties of SiO2 underlayers. In this paper, the mechanical properties of several common interlevel dielectric SiO2 films such as undoped silica glass using a silane (SiH4) precursor, undoped silica glass using a tetraethylorthosilicate (TEOS) precursor, phosphosilicate glass (PSG) deposited by plasma-enhanced chemical vapor deposition (PECVD) and borophosphosilicate glass (BPSG) deposited by sub-atmosphere chemical vapor deposition (SACVD) were studied. Among the four common interlevel layers, BPSG exhibits the smallest modulus (E), hardness (H) and the highest the coefficients of thermal expansion (CTE). BPSG again has the lowest as-deposited compressive stress and the lowest local Si-O-Si strain before annealing. Stress interactions between the various SiO2 underlayers and the Al metal film are further investigated. The impact of dielectric elastic properties on interconnect reliability during thermal cycles is proposed.

scholarly journals A reactive molecular dynamics study on the mechanical properties of a recently synthesized amorphous carbon monolayer converted into a nanotube/nanoscroll

2021 ◽  
Author(s):  
Marcelo Lopes Pereira Junior ◽  
Wiliam Ferreira da Cunha ◽  
Douglas Soares Galvão ◽  
Luiz Antonio Ribeiro Junior
Keyword(s):  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Free Standing ◽  
Reactive Molecular Dynamics

Recently, laser-assisted chemical vapor deposition has been used to synthesize a free-standing, continuous, and stable monolayer amorphous carbon (MAC).

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

Mechanical properties and density of BCxNy films grown by low-pressure chemical vapor deposition from triethylamine borane

2011 ◽  
Vol 47 (3) ◽  
pp. 262-266 ◽  
Author(s):  
V. R. Shayapov ◽  
M. L. Kosinova ◽  
A. P. Smirnov ◽  
E. A. Maksimovskii ◽  
B. M. Ayupov ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Impact of In Situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

2022 ◽  
Author(s):  
Ding-Yuan Chen ◽  
Axel R Persson ◽  
Kai Hsin Wen ◽  
Daniel Sommer ◽  
Jan Gruenenpuett ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Untreated Sample ◽  
Pressure Chemical ◽  
Gan Hemts ◽  
Pre Treatment ◽  
The Impact

Abstract The impact on the performance of GaN HEMTs of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 minutes) were compared in terms of interface properties and device performance. A reduction of oxygen at the interface between SiN and epi-structure is detected by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy measurements in the sample subjected to 10 minutes of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9 % (compared to 16% for the untreated sample), which is attributed to the reduction of oxygen at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 minutes significantly improves the current dispersion uniformity from 14.5 % to 1.9 %. The reduced trapping effects result in a high output power of 3.4 W/mm at 3 GHz (compared to 2.6 W/mm for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before low-pressure chemical vapor deposition of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

Mechanical properties and wear behavior of multi-layer diamond films deposited by hot-filament chemical vapor deposition

2019 ◽  
Vol 494 ◽  
pp. 401-411 ◽  
Author(s):  
Guangyu Yan ◽  
Yuhou Wu ◽  
Daniel Cristea ◽  
Lusheng Liu ◽  
Mircea Tierean ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Wear Behavior ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Hot Filament
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