Growth Kinetics and Deposition‐Related Properties of Subatmospheric Pressure Chemical Vapor Deposited Borophosphosilicate Glass Film

Vladislav Y. Vassiliev; Jia Zhen Zheng; Shiau Khee Tang; Wei Lu; Ji Hua; Yih Shung Lin

doi:10.1149/1.1392048

Growth Kinetics and Deposition‐Related Properties of Subatmospheric Pressure Chemical Vapor Deposited Borophosphosilicate Glass Film

Journal of The Electrochemical Society ◽

10.1149/1.1392048 ◽

1999 ◽

Vol 146 (8) ◽

pp. 3039-3051 ◽

Cited By ~ 9

Author(s):

Vladislav Y. Vassiliev ◽

Jia Zhen Zheng ◽

Shiau Khee Tang ◽

Wei Lu ◽

Ji Hua ◽

...

Keyword(s):

Growth Kinetics ◽

Chemical Vapor ◽

Glass Film ◽

Subatmospheric Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Borophosphosilicate Glass

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Dependence of Film Properties of Subatmospheric Pressure Chemical Vapor Deposited Oxide on Ozone‐to‐Tetraethylorthosilicate Ratio

Journal of The Electrochemical Society ◽

10.1149/1.2221623 ◽

1993 ◽

Vol 140 (6) ◽

pp. 1682-1686 ◽

Cited By ~ 5

Author(s):

Judy Huang ◽

Kurt Kwok ◽

Derek Witty ◽

Kevin Donohoe

Keyword(s):

Chemical Vapor ◽

Film Properties ◽

Subatmospheric Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Enhancement and retardation of thermal boron diffusion in silicon from atmospheric pressure chemical vapor deposited boron silicate glass film

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.036504 ◽

2014 ◽

Vol 53 (3) ◽

pp. 036504 ◽

Cited By ~ 7

Author(s):

Ikuo Kurachi ◽

Kentaro Yoshioka

Keyword(s):

Silicate Glass ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Glass Film ◽

Boron Diffusion ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

Applied Surface Science ◽

10.1016/j.apsusc.2020.148530 ◽

2021 ◽

Vol 542 ◽

pp. 148530

Author(s):

Kexin Deng ◽

Xinhua Wang ◽

Sen Huang ◽

Haibo Yin ◽

Jie Fan ◽

...

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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ChemInform Abstract: Rapid Thermal Annealed Low Pressure Chemical-Vapor-Deposited SiO2 as Gate Dielectric in Silicon MOSFET′s.

ChemInform ◽

10.1002/chin.198736362 ◽

1987 ◽

Vol 18 (36) ◽

Author(s):

S. ANG ◽

S. WILSON

Keyword(s):

Gate Dielectric ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry

Applied Physics Letters ◽

10.1063/1.93714 ◽

1982 ◽

Vol 41 (9) ◽

pp. 844-846 ◽

Cited By ~ 7

Author(s):

H. L. Hwang ◽

C. C. Hwu ◽

J. C. Liue ◽

H. H. Lin

Keyword(s):

Silicon Nitride ◽

Rutherford Backscattering Spectrometry ◽

Chemical Vapor ◽

Low Pressure ◽

Rutherford Backscattering ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICs

10.1117/12.941044 ◽

1987 ◽

Author(s):

Min-Shyong Lin ◽

Hen-Chang Chou

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Tungsten Silicide ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Process Characteristics for Subatmospheric Chemical Vapor Deposited Borophosphosilicate Glass and Effect of Carrier Gas

Journal of The Electrochemical Society ◽

10.1149/1.1837985 ◽

1997 ◽

Vol 144 (9) ◽

pp. 3208-3212 ◽

Cited By ~ 2

Author(s):

L.‐Q. Xia ◽

E. Yieh ◽

P. Gee ◽

F. Campana ◽

B. C. Nguyen

Keyword(s):

Chemical Vapor ◽

Carrier Gas ◽

Process Characteristics ◽

Chemical Vapor Deposited ◽

Borophosphosilicate Glass

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Cited By ~ 10

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Properties of low‐pressure chemical vapor deposited dielectric films from hexamethyldisilazane

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576300 ◽

1989 ◽

Vol 7 (3) ◽

pp. 1446-1450 ◽

Cited By ~ 7

Author(s):

Dean Freeman ◽

Werner Kern

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Dielectric Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Thin Solid Films ◽

10.1016/j.tsf.2013.10.163 ◽

2014 ◽

Vol 550 ◽

pp. 545-553 ◽

Cited By ~ 7

Author(s):

Kiyoteru Kobayashi ◽

Aran Suzuki ◽

Kokichi Ishikawa

Keyword(s):

Silicon Nitride ◽

Leakage Current ◽

Thermal Annealing ◽

Ultraviolet Light ◽

Chemical Vapor ◽

Low Pressure ◽

Annealing Effect ◽

Silicon Nitride Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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