Noninjecting, high-barrier junctions on p-type silicon

N. Garry Tarr

doi:10.1139/p85-114

Noninjecting, high-barrier junctions on p-type silicon

Canadian Journal of Physics ◽

10.1139/p85-114 ◽

1985 ◽

Vol 63 (6) ◽

pp. 723-726

Author(s):

N. Garry Tarr

Keyword(s):

Minority Carrier ◽

Bipolar Transistors ◽

Carrier Injection ◽

Type Silicon ◽

Current Densities ◽

Heavily Doped ◽

P Type ◽

Ultrathin Oxide ◽

Transient Measurements

The fabrication of junctions with very low minority-carrier injection ratios and reasonably good diode characteristics on p-type silicon is reported. These junctions were formed by growing an ultrathin oxide layer on a monocrystalline substrate, depositing polysilicon heavily doped in situ with phosphorus over the oxide, overlaying the polysilicon with aluminum, and then annealing the resulting sandwich structure at temperatures in the range 400–450 °C. The junctions can exhibit leakage current densities below 10−6 A∙cm−2 at moderate reverse bias and reverse breakdown voltages in excess of 20 V. The absence of minority-carrier injection has been demonstrated by diode reverse recovery transient measurements and by the fabrication of bipolar transistors employing these junctions as emitters.

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Ultrasound Defect Engineering of Transition Metals Via Metal-Acceptor Pairs in Silicon

MRS Proceedings ◽

10.1557/proc-378-647 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 2

Author(s):

Ronald E. Bell ◽

Serguei Ostapenko ◽

Jacek Lagowski

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Surface Photovoltage ◽

Defect Engineering ◽

Acceptor Reaction ◽

Minority Carrier Diffusion Length ◽

Enhanced Diffusion ◽

Type Silicon ◽

P Type

AbstractExperimental evidence is provided for ultrasound stimulated dissociation of metal-acceptor pairs in silicon, and also for enhanced diffusion of metal interstitials which may lead to enhanced pairing. The first effect is found dominant in Fe-doped p-type silicon where ultrasound causes low temperature dissociation of Fe-B pairs. This is in contrast to Cr-doped p-type silicon where ultrasound enhances the formation of Cr-B pairs due to enhanced diffusivity of Cr by as much as two orders of magnitude.In this study, the metal-acceptor reaction was monitored in situ via corresponding changes of the minority carrier diffusion length measured by non-contact surface photovoltage. Ultrasound-stimulated pair reaction can be utilized for metal diagnostics for the silicon IC industry. Thus, with ultrasound, Cr-B pairing can be reduced from months to hours, making possible the identification of Cr via pairing kinetics in a reasonable period of time.

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Minority-carrier transport parameters in heavily doped p-type silicon at 296 and 77 K

IEEE Transactions on Electron Devices ◽

10.1109/16.277348 ◽

1993 ◽

Vol 40 (10) ◽

pp. 1872-1875 ◽

Cited By ~ 23

Author(s):

I.-Y. Leu ◽

A. Neugroschel

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Type Silicon ◽

Heavily Doped ◽

P Type

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Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

Applied Physics Letters ◽

10.1063/1.115517 ◽

1995 ◽

Vol 67 (1) ◽

pp. 88-90 ◽

Cited By ~ 4

Author(s):

D. C. Leung ◽

P. R. Nelson ◽

O. M. Stafsudd ◽

J. B. Parkinson ◽

G. E. Davis

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Type Silicon ◽

P Type

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Identification of Cr in p‐type silicon using the minority carrier lifetime measurement by the surface photovoltage method

Applied Physics Letters ◽

10.1063/1.116574 ◽

1996 ◽

Vol 68 (23) ◽

pp. 3281-3283 ◽

Cited By ~ 33

Author(s):

Kamal Mishra

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Lifetime Measurement ◽

Surface Photovoltage ◽

Type Silicon ◽

P Type

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The effect of oxide precipitates on minority carrier lifetime in p-type silicon

Journal of Applied Physics ◽

10.1063/1.3632067 ◽

2011 ◽

Vol 110 (5) ◽

pp. 053713 ◽

Cited By ~ 57

Author(s):

J. D. Murphy ◽

K. Bothe ◽

M. Olmo ◽

V. V. Voronkov ◽

R. J. Falster

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Type Silicon ◽

P Type

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A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

MRS Proceedings ◽

10.1557/proc-234-95 ◽

1991 ◽

Vol 234 ◽

Cited By ~ 9

Author(s):

Cronin B. Vining

Keyword(s):

High Temperature ◽

Transport Properties ◽

Silicon Germanium ◽

Phonon Scattering ◽

Impurity Scattering ◽

Long Wavelength ◽

Type Silicon ◽

Heavily Doped ◽

P Type ◽

Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

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Vertical Bipolar Transistors and a Merged 3–D Vertical Bipolar—Mos Device in Recrystallized Polysilicon

MRS Proceedings ◽

10.1557/proc-53-395 ◽

1985 ◽

Vol 53 ◽

Author(s):

J.C. Sturm ◽

J.F. Gibbons

Keyword(s):

Minority Carrier ◽

Strong Dependence ◽

Three Dimensional ◽

Bipolar Transistors ◽

Bipolar Transistor ◽

Current Gain ◽

Collector Current ◽

Beam Laser ◽

P Type ◽

Mos Device

ABSTRACTThe minority carrier properties of shaped—beam laser-recrystallized polysilicon films have been studied, leading to the successful fabrication of vertical bipolar transistors in these films and to the demonstration of a novel three—dimensional mergedvertical bipolar—MOS device. Experiments with lateral transistors established a minority carrier diffusion length of 4 μm in p—type recrystallized films. Vertical bipolar npn transistors with a base—width of 0.2 μm were fabricated in 0.75–μm—thick films using a polysilicon emitter technology. The strong dependence of the gain of the transistors on hydrogen annealing steps is described. With an Ar:H plasma anneal to decrease base—emitter space—charge region recombination, a common—emitter current gain of 100 was possible. The bipolar transistor technology was then used to develop a 3—D fourterminal merged verticalbipolar—MOS device in a recrystallized film. It consists of the three terminals of a bipolar transistor plus a fourth underlying terminal which serves to switch the collector current on or off. A simple model for the device is presented.

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