Structural Study of Tailored Titania Thin Layers

2008 ◽  
Vol 73 (8-9) ◽  
pp. 1222-1230 ◽  
Author(s):  
Olga Šolcová ◽  
Lenka Matějová ◽  
Simona Krejčíková ◽  
Zdeněk Matěj ◽  
Radomír Kužel ◽  
...  
Keyword(s):  
Physical Adsorption ◽  
Dip Coating ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Air Stream ◽  
Titania Layer ◽  
Structure Properties

Thin nanolayers of titania prepared by repeated dip-coating of silica glass into a transparent homogeneous sol made from nonionic surfactants with various numbers of oxyethylene units were studied. Calcination in air stream was used to convert transparent gel layers into anatase layers. The surface morphology, roughness, structure and texture properties were estimated by nitrogen physical adsorption, X-ray diffraction characterization, atomic force microscopy, transmission and scanning electron microscopy. Additionally, the contact angle determination was tested as a rapid method for evaluation of the titania layer surface quality. The influence of the number of oxyethylene units in surfactants on texture and structure properties of the prepared titania layers was found and discussed.

Morphology and orientation of thin poly(3-hexylthiophene) (P3HT) films on differently silanized silicon oxide

e-Polymers ◽  
2009 ◽  
Vol 9 (1) ◽  
Author(s):  
Guido Scavia ◽  
William Porzio ◽  
Silvia Destri ◽  
Alberto Giacometti Schieroni ◽  
Fabio Bertini
Keyword(s):  
Annealing Temperature ◽  
Silicon Oxide ◽  
Alkyl Chain ◽  
Alkyl Chain Length ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Techniques

AbstractThe morphology and structure of the overlying poly(3-hexylthiophene) (P3HT) layer onto differently silanized silicon oxide has been studied by Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD) techniques. By increasing the silanizer alkyl chain length, the layer morphology evolves from a filament like to globular needle like as a consequence of the different SAM organization, while the P3HT conformation remains edge-on. For each case the effect of the annealing temperature has been studied. For all the cases a particular attention has been paid to the first thin layers close to the interface P3HT/SiOx. The effect of a polar substituent and presence of aromatic ring has been also studied.

Preparation of Photocatalytic Nanostructured TiO2 Thin Films

2008 ◽  
Vol 587-588 ◽  
pp. 795-799 ◽  
Author(s):  
A. Di Paola ◽  
M. Addamo ◽  
M. Bellardita ◽  
E. García-López ◽  
G. Marcì ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dip Coating ◽  
Coating Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Glass Slides ◽  
Scanning Electron

Photoactive films consisting of pure anatase, brookite or rutile were deposited on glass slides by a dip coating process from water dispersions or solutions obtained by using TiCl4 as the precursor. The films were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. The photocatalytic activity of the various samples was evaluated by using the photooxidation of 2-propanol in gas solid regime as probe reaction. Brookite and anatase films showed a good photoactivity degrading the substrate and the propanone produced during the reaction.

STRUCTURE AND PHOTOLUMINESCENT PROPERTIES OF SiCO THIN-FILMS DOPED WITH Al PREPARED BY DUAL MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (16) ◽  
pp. 2149-2156
Author(s):  
JICHENG ZHOU ◽  
XUQIANG ZHENG ◽  
ZHIJIE SHI ◽  
BAOXING ZHAO ◽  
FU LIU ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Dispersive Spectrometer ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Related Defect ◽  
Amorphous Sic

SiCO thin-films doped with aluminum (Al) prepared by alternate deposition of SiC and Al thin layers using Ar and O 2 as sputtering gas were deposited on n- Si substrates. The as-deposited thin-films were annealed under 600°C in nitrogen ambient. The thin-films have been characterized by atomic force microscopy, energy dispersive spectrometer, X-ray diffraction, fourier transform infrared spectroscopy, and photoluminescence spectra. The results showed that the introduction of Al promotes the formation of Si — C bonds, but hinders amorphous SiC to further transform to crystalline SiC . The doped Al would react with SiO x in the thin-films to form more Si particles which strongly affect the optical properties. After Al doped, there presented a seven times of enhancement emission band centered around 412 nm, which is ascribed to nanostructure Si -related defect centers embedded in the SiCO thin-films. The obtained results are expected to have important applications in modern optoelectronic devices.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Low Molecular Weight Microfibers with Light Sensing Properties

2017 ◽  
Vol 54 (4) ◽  
pp. 655-658
Author(s):  
Andrei Bejan ◽  
Dragos Peptanariu ◽  
Bogdan Chiricuta ◽  
Elena Bicu ◽  
Dalila Belei
Keyword(s):  
Molecular Weight ◽  
Low Molecular Weight ◽  
X Ray Diffraction ◽  
Aromatic Rings ◽  
X Ray ◽  
Force Microscopy ◽  
Light Sensing ◽  
Sensing Applications ◽  
Atomic Force ◽  
Low Molecular Weight Compounds

Microfibers were obtained from organic low molecular weight compounds based on heteroaromatic and aromatic rings connected by aliphatic spacers. The obtaining of microfibers was proved by scanning electron microscopy. The deciphering of the mechanism of microfiber formation has been elucidated by X-ray diffraction, infrared spectroscopy, and atomic force microscopy measurements. By exciting with light of different wavelength, florescence microscopy revealed a specific optical response, recommending these materials for light sensing applications.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Lateral Size of Self-Patterned Nanostructures Controlled by Multi-Step Deposition

2005 ◽  
Vol 106 ◽  
pp. 117-122 ◽  
Author(s):  
Izabela Szafraniak ◽  
Dietrich Hesse ◽  
Marin Alexe
Keyword(s):  
Electron Microscopy ◽  
Ultrathin Films ◽  
Lateral Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Non Volatile Memory ◽  
Ferroelectric Capacitors ◽  
Scanning Electron

Self-patterning presents an appealing alternative to lithography for the production of arrays of nanoscale ferroelectric capacitors for use in high density non-volatile memory devices. Recently a self-patterning method, based on the use of the instability of ultrathin films during hightemperature treatments, was used to fabricate nanosized ferroelectrics. This paper reports the use of the method for the preparation of PZT nanoislands on different single crystalline substrates - SrTiO3, MgO and LaAlO3. Moreover, a multi-step deposition procedure in order to control lateral the dimension of the crystals was introduced. The nanostructures obtained were studied by atomic force microscopy, scanning electron microscopy and X-ray diffraction.

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