High Reliability Planar InGaAs/InP Photodiodes Made With High Yield by Atmospheric Pressure MOVPE

1988 ◽  
Author(s):  
M. J. Robertson ◽  
C. P. Skrimshire ◽  
S. Ritchie ◽  
S. K. Sargood ◽  
A. W. Nelson ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
High Reliability ◽  
High Yield

Packaging Materials for 2.5/3D Technology

2013 ◽  
Vol 2013 (1) ◽  
pp. 000276-000284 ◽  
Author(s):  
Brian Schmaltz
Keyword(s):  
High Reliability ◽  
Low Cost ◽  
High Yield ◽  
Wafer Level ◽  
Reflow Process ◽  
Thermal Compression ◽  
Conductive Films ◽  
Cu Pillar ◽  
Advanced Packaging ◽  
Capillary Underfill

The age of advanced mobile devices is on the direct horizon, are we ready for it? Less power consumption, faster processing, high reliability, high yield, low cost are words engineers are all too familiar with. 2.5/3D utilizing interposer technology, Thru Silicon Via (TSV), sub-50μm die thickness are a few of the latest techniques engineers use to solve these issues. As technology progresses to smaller process generations, new packaging applications are being demanded. The standard solder reflow process is being pushed by advancements in Cu pillar bumps, thermal compression bonding (TCB) and wafer level / pre-applied materials. This presentation will centralize around the latest advancements in NAMICS Materials for Advanced Packaging Technology; Capillary Underfill (CUF), Pre-Applied Material, Non-Conductive Paste (NCP), Non-Conductive Films (NCF).

New High Yield, High Reliability Materials System for Silver Multilayer Construction

1993 ◽  
Vol 10 (1) ◽  
pp. 14-17
Author(s):  
C.R. Pickering ◽  
W.A. Craig ◽  
M.F. Barker ◽  
J. Cocker ◽  
P.C. Donohue ◽  
...  
Keyword(s):  
High Reliability ◽  
High Yield

scholarly journals Catalytic Efficacy of 2,2′-Bipyridine Cobalt(II) Complex: Hydrothermal Synthesis, X-Ray Structure and Aerobic Epoxidation of Alkenes

2020 ◽  
Vol 33 (1) ◽  
pp. 10-14
Author(s):  
RAJESH BERA
Keyword(s):  
Crystal Structure ◽  
Hydrothermal Synthesis ◽  
Atmospheric Pressure ◽  
Active Catalyst ◽  
High Yield ◽  
X Ray ◽  
X Ray Crystallography ◽  
Mononuclear Cobalt ◽  
Epoxidation Of Alkenes ◽  
Acetonitrile Medium

A mononuclear cobalt(II) complex, [Co(bpy)2(NO3)](NO3)·3H2O (1) (bpy = 2,2′-bipyridine) has been synthesized hydrothermally and the crystal structure was characterized by X-ray crystallography. Complex 1 is capable of activating aerobic oxygen at atmospheric pressure. [Co(bpy)2(NO3)](NO3)·3H2O (1) was used as an active catalyst for the aerobic epoxidaion of various alkenes with isobutyraldehyde as co-reductant in acetonitrile medium. Complex 1 catalyzes the epoxidaion reaction efficiently, which reflected in high yield of products with desired selectivity.

Highly reliable planar GaInAs/InP photodiodes with high yield made by atmospheric pressure MOVPE

1988 ◽  
Vol 24 (5) ◽  
pp. 252 ◽  
Author(s):  
M.J. Robertson ◽  
S. Ritchie ◽  
S.K. Sargood ◽  
A.W. Nelson ◽  
L. Davis ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
High Yield

Molten salt assisted synthesis of black titania hexagonal nanosheets with tuneable phase composition and morphology

RSC Advances ◽  
2015 ◽  
Vol 5 (104) ◽  
pp. 85928-85932 ◽  
Author(s):  
Jijian Xu ◽  
Guilian Zhu ◽  
Tianquan Lin ◽  
Zhanglian Hong ◽  
Juan Wang ◽  
...  
Keyword(s):  
Phase Composition ◽  
Low Temperature ◽  
Molten Salt ◽  
Atmospheric Pressure ◽  
High Yield

A facile high yield molten salt route to fabricate black titania hexagonal nanosheets under atmospheric pressure and low temperature.

Thinning of SiC Wafer by Plasma Chemical Vaporization Machining

2010 ◽  
Vol 645-648 ◽  
pp. 857-860 ◽  
Author(s):  
Yasuhisa Sano ◽  
Takehiro Kato ◽  
Tsutomu Hori ◽  
Kazuya Yamamura ◽  
Hidekazu Mimura ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
High Hardness ◽  
High Yield ◽  
Plasma Chemical ◽  
Power Transistors ◽  
Device Processing ◽  
Mechanical Machining ◽  
Sic Wafer

In order to reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin an SiC wafer with a high yield rate by conventional mechanical machining because its high hardness and brittleness cause cracking and chipping during thinning. In this study, a small rectangular SiC sample was thinned by plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. As a result, the sample was successfully thinned to 40 m without any cracking or chipping. Furthermore, the surface roughness was improved after thinning, and the edge of the wafer became rounded automatically. Therefore, PCVM can be used as an effective method for thinning SiC wafers.

Oxidation of 4-nitro-o-xylene with nitric acid using N-hydroxyphthalimide under phase transfer conditions

2015 ◽  
Vol 69 (4) ◽  
Author(s):  
Song-Bo Wei ◽  
Bo Tang ◽  
Xin-Hua Peng
Keyword(s):  
Nitric Acid ◽  
Atmospheric Pressure ◽  
Phase Transfer ◽  
High Yield ◽  
Oxidizing Agent ◽  
Nitrobenzoic Acid ◽  
Radical Initiators ◽  
Cobalt Dichloride ◽  
Dilute Nitric Acid

Abstract4-Nitro-o-xylene was selectively oxidized to 2-methyl-4-nitrobenzoic acid using dilute nitric acid as the oxidizing agent under atmospheric pressure. The oxidation of 4-nitro-o-xylene was effectively promoted by an addition of radical initiators. Under reflux, 2-methyl-4-nitrobenzoic acid was afforded in high yield using nitric acid combined with N-hydroxyphthalimide, cobalt dichloride (CoCl

Assembly challenges in developing 3D IC package with ultra high yield and high reliability

2015 ◽  
Author(s):  
Raghunandan Chaware ◽  
Ganesh Hariharan ◽  
Jeff Lin ◽  
Inderjit Singh ◽  
Glenn O'Rourke ◽  
...  
Keyword(s):  
High Reliability ◽  
High Yield ◽  
3D Ic ◽  
Ic Package
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