Immersion lithography and double patterning in advanced microelectronics

Author(s):  
T. Vandeweyer ◽  
J. Bekaert ◽  
M. Ercken ◽  
R. Gronheid ◽  
A. Miller ◽  
...  
2008 ◽  
Author(s):  
Vladimir Fleurov ◽  
Slava Rokitski ◽  
Robert Bergstedt ◽  
Hong Ye ◽  
Kevin O’Brien ◽  
...  

2010 ◽  
Author(s):  
Bencherki Mebarki ◽  
Liyan Miao ◽  
Yongmei Chen ◽  
James Yu ◽  
Pokhui Blanco ◽  
...  

2010 ◽  
Author(s):  
Masaya Yoshino ◽  
Hiroshi Umeda ◽  
Hiroaki Tsushima ◽  
Hidenori Watanabe ◽  
Satoshi Tanaka ◽  
...  

2011 ◽  
Author(s):  
Hiroshi Umeda ◽  
Hiroaki Tsushima ◽  
Hidenori Watanabe ◽  
Satoshi Tanaka ◽  
Masaya Yoshino ◽  
...  

2009 ◽  
Author(s):  
Sabrina Wong ◽  
Jeong Yun Yu ◽  
Sue Ryeon Kim ◽  
Mike Mori ◽  
Amy Kwok ◽  
...  

2009 ◽  
Author(s):  
Slava Rokitski ◽  
Toshi Ishihara ◽  
Rajeskar Rao ◽  
Rui Jiang ◽  
Daniel Riggs ◽  
...  

2012 ◽  
Vol 591-593 ◽  
pp. 351-355
Author(s):  
Hui Chen ◽  
Qi Liu

Double patterning improves the development of immersion lithography, but it brings new challenges including the higher scanning velocity of wafer. In this paper, considering two typical injection types, the three-dimensional computational fluid dynamics model is developed to investigate the effect of injection parameters on immersion liquid during wafer scanning. By analyzing the velocity distribution of immersion flow and normal stress on the lens, the proper parameters of injection are proposed under the typical conditions, and the appropriate parameters which lead to effective renovation with low lens distortion are also given.


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