Monte Carlo simulation of ionized impurity scattering process in bulk silicon

2008 ◽  
Author(s):  
Dmitrii Speransky
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impurity Scattering ◽  
Bulk Silicon ◽  
Scattering Process ◽  
Ionized Impurity Scattering

Ionized impurity scattering in Monte Carlo calculations

1986 ◽  
Vol 59 (3) ◽  
pp. 813-815 ◽  
Author(s):  
T. G. Van de Roer ◽  
F. P. Widdershoven
Keyword(s):  
Monte Carlo ◽  
Impurity Scattering ◽  
Monte Carlo Calculations ◽  
Ionized Impurity Scattering

Energy-Loss functions of Au derived by Monte Carlo analysis of angle-resolved Reels spectra

1992 ◽  
Vol 50 (2) ◽  
pp. 1676-1677
Author(s):  
Hideki Yoshikawa ◽  
Ryuichi Shimizu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Loss ◽  
Loss Function ◽  
Energy Region ◽  
Optical Loss ◽  
Low Energy ◽  
Scattering Process ◽  
Energy Loss Function ◽  
Surface Excitation

It is very well understood for free electron like metals that photoelectrons undergo not only bulk excitation but also surface excitation. For transition metals the contribution of surface excitation has not yet fully been discussed, and optical loss function has been widely used for background analysis of x-ray photoelectron spectroscopy (XPS).In the previous work we proposed to derive the energy loss function which reproduced the XPS 4f spectrum very well by using the Monte Carlo simulation. This Monte Carlo simulation code describes elastic scattering process by Mott scattering cross-section and inelastic scattering process by differential inelastic mean free path (DIMFP) calculated from energy loss function. Optical loss function and this adjusted loss function obtained for Au are represented by dashed and solid lines in Fig.l, respectively. The intensity of the adjusted loss function is largely enhanced in the low-energy region comparing to the optical loss function. This sort of the enhancement in low energy region for noble metals have also been reported recently by Yubero et al.

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